MT48LC8M16A2P-7E IT:L TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 192 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-7E IT:L TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-7E IT:L TR is a 128 Mbit volatile SDRAM device organized as 8M × 16 with four internal banks. It is a fully synchronous parallel DRAM optimized for systems requiring PC100/PC133-class SDRAM operation, offering a compact 54-pin TSOP II package and industrial operating temperature range.
Key Features
- Memory Architecture 128 Mbit memory organized as 8M × 16 with four internal banks, suitable for parallel SDRAM subsystems.
- SDRAM Technology Fully synchronous DRAM with internal pipelined operation and programmable burst lengths (1, 2, 4, 8, or full page); all signals registered on the positive edge of the system clock.
- Performance PC100- and PC133-compliant; specified clock frequency up to 133 MHz and access time of 5.4 ns for the -7E speed grade; programmable CAS latency options indicated in the datasheet.
- Refresh and Auto Modes Supports Auto Precharge (including concurrent auto precharge), Auto Refresh, and Self Refresh modes with a 64 ms, 4,096-cycle refresh scheme.
- Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs; internal banks hide row access/precharge and column address can be changed every clock cycle.
- Power Single-supply operation at +3.3 V (specified 3.0 V to 3.6 V).
- Package and Mounting 54-pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount designs; supplier device package listed as 54-TSOP II.
- Operating Temperature Industrial temperature range: −40 °C to +85 °C (TA).
Typical Applications
- PC100/PC133 systems Memory for systems requiring PC100 or PC133-compliant SDRAM operation, leveraging the device's 133 MHz clock capability and 5.4 ns access time.
- Industrial-temperature equipment Use in equipment operating across −40 °C to +85 °C where a 128 Mbit SDRAM in a 54‑TSOP II package is required.
- Parallel SDRAM subsystems Integration into parallel memory subsystems that benefit from LVTTL-compatible I/Os, programmable burst lengths, and internal bank architecture.
Unique Advantages
- Verified PC100/PC133 compatibility: Device is PC100- and PC133-compliant per datasheet, supporting established SDRAM timing profiles.
- Compact surface-mount package: 54-pin TSOP II reduces board area while providing a standard footprint for parallel SDRAM implementations.
- Industrial temperature support: Rated for −40 °C to +85 °C, enabling deployment in temperature-critical applications.
- Flexible burst and refresh modes: Programmable burst lengths, Auto Precharge, Auto Refresh, and Self Refresh modes simplify memory control and power management.
- Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common system power rails.
- Pipelined internal operation: Internal pipelining and multi-bank architecture allow column address changes every clock cycle to improve throughput in burst transfers.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC8M16A2P-7E IT:L TR delivers 128 Mbit of synchronous parallel DRAM in a compact 54‑TSOP II package, combining PC100/PC133-class timing, industrial temperature range, and standard 3.3 V supply compatibility. Its internal pipelined architecture, programmable burst lengths, and built-in refresh modes provide predictable performance and straightforward integration for systems that require reliable parallel SDRAM.
This device is well suited for designs that need a proven SDRAM solution with industrial temperature capability and a standard surface-mount footprint, backed by manufacturer datasheet specifications for timing, power, and functional modes.
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