MT48LC8M16A2P-7E:L TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 165 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-7E:L TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-7E:L TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It operates with a 133 MHz clock and 5.4 ns access time, making it suitable for systems that require PC100/PC133-compatible SDRAM timing and standard commercial temperature operation.
This device is designed for integration in applications needing a 3.3 V supply (3.0 V–3.6 V), LVTTL-compatible I/O, and a compact 54-pin TSOP II (0.400", 10.16 mm width) package.
Key Features
- Memory Architecture The device is organized as 8M × 16 (128 Mbit) with four internal banks to optimize row/column operations and hide row access/precharge latency.
- SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
- Performance PC100- and PC133-compliant timing; specified for 133 MHz clock frequency and 5.4 ns access time for the -7E speed grade.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8 or full page) plus Auto Precharge, Concurrent Auto Precharge, Auto Refresh modes, and a 64 ms / 4,096-cycle refresh scheme.
- Low-Power and Self-Refresh Supports Self Refresh Mode with both standard and low-power options, indicated in the datasheet options.
- Interface and Signaling LVTTL-compatible inputs and outputs for standard 3.3 V system interfacing; single +3.3 V ±0.3 V supply.
- Package and Mounting Supplied in a 54-pin TSOP II (400 mil) package suitable for surface-mount assembly; package width 10.16 mm.
- Operating Range Commercial temperature grade specified for 0°C to +70°C (TA).
Typical Applications
- PC-Compatible Memory Subsystems Suitable for designs targeting PC100/PC133 timing requirements where standard SDRAM timing compatibility is required.
- Embedded System Memory Use as parallel SDRAM for embedded platforms requiring 128 Mbit density and LVTTL I/O at 3.3 V supply.
- Board-Level SDRAM Expansion Compact 54-TSOP II package supports board-level integration where board space and standard commercial temperature operation are design constraints.
Unique Advantages
- Verified PC100/PC133 Timing: The -7E speed grade and 133 MHz clock rating provide compatibility with systems designed around PC100/PC133 SDRAM timing.
- Flexible Burst Control: Programmable burst lengths (including full-page) enable designers to tune throughput and latency to match memory access patterns.
- Power Management Options: Self Refresh and low-power modes reduce standby power and support systems that require power-aware memory behavior.
- Compact Surface-Mount Package: 54-pin TSOP II (0.400", 10.16 mm) simplifies PCB routing and assembly for space-constrained designs.
- Standard Voltage and I/O: Single +3.3 V ±0.3 V supply and LVTTL-compatible I/O ease integration into common 3.3 V platforms.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC8M16A2P-7E:L TR provides a straightforward, standards-aligned SDRAM solution for designs that require 128 Mbit density, PC100/PC133 timing support, and a compact TSOP II package. Its combination of internal banking, programmable burst lengths, and self-refresh options address common performance and power-management needs in commercial-temperature systems.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM for embedded platforms, PC-compatible memory subsystems, or board-level expansions where 3.3 V operation, LVTTL I/O, and a 54-pin TSOP II footprint are required. Its documented timing and refresh behavior support predictable integration into existing SDRAM memory controllers.
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