MT48LC8M16A2TG-6A:G TR

The MT48LC8M16A2TG-6A:G TR is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous SDR SDRAM architecture with internal pipelining and banked memory to support high-throughput, clocked operation.

This device is intended for systems that require a 128 Mbit parallel SDRAM component operating from a 3.0 V to 3.6 V supply, with a commercial operating temperature range of 0 °C to 70 °C and a 400 mil (10.16 mm) wide 54‑TSOP II package.

Key Features

• Memory Technology  SDR SDRAM; fully synchronous operation with all signals registered on the positive edge of the system clock.
• Memory Organization  8M × 16 configuration (128 Mbit) with four internal banks for improved access concurrency and hidden row precharge.
• Performance  Clock frequency up to 167 MHz (speed grade -6A) with an access time listed as 5.4 ns and timing options supporting CL and RCD/RP parameters.
• Programmable Burst and Refresh  Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto refresh and self‑refresh modes (standard and low power options noted in device documentation).
• Interface and Compatibility  Parallel memory interface with LVTTL‑compatible inputs and outputs; PC100 and PC133 compliance is indicated in the device feature set.
• Power  Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V specified) suitable for standard 3.3 V system rails.
• Package and Temperature  54‑pin TSOP II (0.400" / 10.16 mm width) plastic package; commercial operating range 0 °C to +70 °C (TA).

Typical Applications

• Parallel memory subsystems  Used as a 128 Mbit SDRAM component where parallel SDRAM density and synchronous operation are required.
• System memory expansion  Suitable for designs that need an external SDRAM device with 8M × 16 organization and standard 3.3 V power.
• Clocked data buffering  Employed in applications leveraging pipelined operation and internal banks to manage row access and precharge sequences.

Unique Advantages

• High-density 8M × 16 organization: Provides 128 Mbit in a single 54‑pin TSOP II component to simplify board-level memory implementation.
• Synchronous, pipelined architecture: All signals registered on the positive clock edge and internal pipelining enable predictable timing and clocked transfers.
• Flexible burst and refresh control: Programmable burst lengths and auto/self‑refresh support allow tuning for different memory access patterns and power scenarios.
• Standard 3.3 V operation: Operates from a 3.0 V to 3.6 V supply (3.3 V ±0.3 V), facilitating integration into common 3.3 V systems.
• Compact TSOP II package: 54‑pin, 400 mil TSOP II package offers a space-efficient footprint for board designs requiring through‑board parallel DRAM.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2TG-6A:G TR positions itself as a straightforward, standards‑based 128 Mbit SDRAM solution for designs needing synchronous, parallel memory with pipelined operation and internal banking. Its 8M × 16 organization, programmable burst options, and support for PC100/PC133 timing profiles make it a suitable candidate where a discrete SDRAM device is required.

This device is well suited to engineers and procurement teams looking for a commercially rated SDRAM device in a compact 54‑TSOP II package, offering predictable timing, standard 3.3 V power operation, and built‑in refresh and self‑refresh modes documented in the device specifications.

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