MT48LC8M16A2P-7E:L

The MT48LC8M16A2P-7E:L is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined SDRAM architecture with internal banks, programmable burst lengths and multiple refresh and self-refresh modes.

This device targets commercial-temperature designs that require PC100/PC133-class SDRAM timing, a 3.3 V supply range, and a 54-pin TSOP II footprint for compact board-level integration.

Key Features

• Core / Memory Architecture  Fully synchronous SDRAM with internal pipelined operation and multiple internal banks to help hide row access and precharge latency.
• Memory Capacity & Organization  128 Mbit memory organized as 8M × 16, implemented as synchronous DRAM for parallel-system integration.
• Performance & Timing  PC100 and PC133 compliant timing options; typical clock frequency listed at 133 MHz with a 5.4 ns access time and 14 ns write cycle time (word/page).
• Programmable Transfer Modes  Supports programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent Auto Precharge), Auto Refresh and Self Refresh modes.
• Signal Compatibility  LVTTL-compatible inputs and outputs; all signals are registered on the positive edge of the system clock.
• Power  Single-supply operation with a listed voltage range of 3.0 V to 3.6 V (documented as +3.3 V ±0.3 V in product literature).
• Refresh  Standard 64 ms, 4,096-cycle refresh sequence supported to maintain stored data integrity.
• Package & Temperature  54-pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

• Commercial Embedded Systems  Off-board SDRAM for compact embedded designs operating at commercial temperatures that require parallel SDRAM capacity and timing.
• PC100 / PC133-Class Memory Subsystems  Use in legacy or specialized platforms that require PC100/PC133-compliant SDRAM timing and behavior.
• Board-Level Memory Expansion  54-pin TSOP II footprint enables board-level integration where a 128 Mbit parallel SDRAM device is required for system buffers or working memory.

Unique Advantages

• PC100/PC133 Compliance: Documented timing grades and PC100/PC133 compliance simplify integration into systems targeting those clock domains.
• Pipelined, Banked Architecture: Internal pipelining and multiple banks allow column address changes every clock cycle and reduce effective latency for burst transfers.
• Flexible Burst and Refresh Modes: Programmable burst lengths plus Auto Precharge, Auto Refresh and Self Refresh provide flexibility for diverse memory access patterns and power scenarios.
• Industry-Standard Voltage and I/O: Single-supply 3.0–3.6 V operation with LVTTL-compatible I/O supports common system voltage rails and signaling.
• Compact Package: 54-pin TSOP II (0.400") package offers a space-efficient footprint for board-level memory implementations.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2P-7E:L combines a 128 Mbit SDRAM organization with PC100/PC133-class timing, a 54-pin TSOP II package and a standard 3.3 V supply range to address commercial designs that need parallel SDRAM capacity with predictable timing. Its fully synchronous, pipelined architecture and internal bank structure provide the control and transfer flexibility required for burst-oriented memory systems.

This device is suitable for designers specifying a compact, commercial-temperature SDRAM solution with documented access times, clock-frequency grades and refresh behavior. Use it where a proven Micron SDRAM family device is required for system memory, buffering or legacy platform support.

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