MT48LC8M16A2TG-6A:G

The MT48LC8M16A2TG-6A:G is a 128 Mbit SDR SDRAM organized as 8M × 16 with four internal banks and a parallel memory interface. It is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and operates from a 3.3 V ±0.3 V supply.

Designed for systems that require synchronous parallel SDRAM, this device offers PC100/PC133 compliance and timing options that support a 167 MHz clock frequency (–6A speed grade), making it suitable for designs needing fully synchronous, pipelined DRAM with programmable burst operation and standard commercial temperature range (0 °C to +70 °C).

Key Features

• Core Architecture Fully synchronous SDR SDRAM with all signals registered on the positive edge of the system clock and internal, pipelined operation for column-address changes every clock cycle.
• Memory Organization 128 Mbit capacity arranged as 8M × 16 with four internal banks (2 Meg × 16 × 4 banks).
• Performance & Timing –6A speed grade targeting a 167 MHz clock frequency; specified access time 5.4 ns and timing options supporting CAS latency and RCD/RP parameters consistent with PC100/PC133 operation. Write cycle time (word/page) is 12 ns.
• Programmable Burst & Operation Modes Programmable burst lengths of 1, 2, 4, 8 or full page. Includes auto precharge, concurrent auto precharge and auto refresh modes.
• Refresh and Self-Refresh Auto-refresh support (4K-cycle refresh). Self-refresh modes include standard and low-power options (low-power self-refresh not available on AT devices).
• Interface & Signaling Parallel memory interface with LVTTL-compatible inputs and outputs for 3.3 V signaling.
• Power & Supply Single 3.3 V ±0.3 V power supply (3.0 V to 3.6 V operating range).
• Package & Temperature 54-pin TSOP II plastic package (400 mil) with commercial operating temperature range of 0 °C to +70 °C.

Typical Applications

• Parallel memory subsystems — System designs that require a 128 Mbit SDRAM organized as 8M × 16 with a parallel interface and TSOP II footprint.
• PC100/PC133-compatible platforms — Designs targeting PC100/PC133 timing profiles and synchronous SDRAM operation at the –6A speed grade.
• Embedded systems with synchronous DRAM — Embedded controllers and modules that need pipelined SDRAM with programmable burst lengths and auto-refresh capabilities.

Unique Advantages

• Synchronous, pipelined operation: Enables column-address changes every clock cycle for predictable, clock-aligned memory access.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) to match system transfer patterns and optimize throughput.
• Robust refresh management: Auto-refresh and self-refresh modes (including low-power variant) simplify memory retention across power and idle states.
• Established signaling and timing: LVTTL-compatible I/O and PC100/PC133 compliance support integration into existing synchronous SDRAM designs.
• Compact TSOP II package: 54-pin TSOP II (0.400" / 10.16 mm) provides a small form-factor footprint for board-level integration.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2TG-6A:G delivers a synchronous, pipelined 128 Mbit SDRAM solution with configurable burst lengths, auto-refresh/self-refresh support, and timing aligned to PC100/PC133 profiles. Its 8M × 16 organization, 54-pin TSOP II package, and 3.3 V supply make it appropriate for designs that require compact, parallel SDRAM memory with predictable timing behavior.

This device is suited to engineers and procurement teams targeting commercial-temperature, board-mounted SDRAM for legacy and embedded platforms that depend on standard SDRAM signaling, refresh management, and burst transfer flexibility.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the MT48LC8M16A2TG-6A:G.