MT48LC8M16A2TG-75 IT:G TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,500 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2TG-75 IT:G TR – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC8M16A2TG-75 IT:G TR is a 128 Mbit SDRAM organized as 8M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDR SDRAM architecture and is targeted at systems requiring PC100/PC133‑class synchronous DRAM performance with industrial temperature operation.

Key operational characteristics include a 133 MHz clock frequency, 3.0 V–3.6 V single supply, fast access times, internal pipelined operation and internal bank architecture to support efficient burst and pipelined memory access patterns.

Key Features

  • Core / Architecture  Fully synchronous SDR SDRAM organized as 8M × 16 with four internal banks to support pipelined operation and concurrent row access/precharge handling.
  • Memory Capacity & Organization  128 Mbit total capacity presented as 8M × 16, suitable for parallel DRAM memory subsystems.
  • Performance  PC100‑ and PC133‑compliant timing options with a clock frequency of 133 MHz and an access time specified at 5.4 ns. Programmable burst lengths (1, 2, 4, 8, or full page).
  • Timing and Cycle  Target timing grades include 3‑3‑3 and 2‑2‑2 CAS latencies; write cycle time (word/page) is 15 ns for the specified device.
  • Power  Single 3.3 V ±0.3 V supply range (3.0 V–3.6 V) with standard and low‑power self‑refresh modes noted in device options.
  • Interfaces & I/O  LVTTL‑compatible inputs and outputs with all signals registered on the positive edge of the system clock to maintain synchronous operation.
  • System Reliability  Auto refresh (4K cycle refresh), auto precharge and selectable refresh modes to maintain data integrity during normal and low‑power operation.
  • Package & Temperature  54‑pin TSOP II (400 mil, 10.16 mm width) plastic package with industrial operating temperature range of –40°C to +85°C.

Typical Applications

  • Industrial Control Systems  Provides synchronous parallel DRAM capacity for control and data buffering in equipment operating across –40°C to +85°C.
  • Embedded Memory Subsystems  Acts as a compact SDRAM device for embedded boards requiring PC100/PC133 timing and a 54‑pin TSOP II footprint.
  • System Memory Buffers  Supports high‑rate burst transfers and pipelined access patterns for buffer and working memory roles in electronic systems.

Unique Advantages

  • Industry‑standard timing compatibility: PC100 and PC133 compliance ensures predictable integration into systems designed around these SDRAM timing classes.
  • High‑speed synchronous operation: 133 MHz clock frequency and programmable CAS latency options enable flexible performance tuning for target system requirements.
  • Industrial temperature rating: –40°C to +85°C operation supports deployment in temperature‑challenging environments.
  • Compact TSOP II packaging: 54‑pin TSOP II (0.400", 10.16 mm width) provides a dense, board‑level footprint for space‑constrained designs.
  • Single 3.3 V supply: 3.0 V–3.6 V operation simplifies power rail design while supporting standard LVTTL I/O levels.
  • Built‑in refresh and power features: Auto refresh, auto precharge and self‑refresh options help maintain data integrity and support low‑power modes.

Why Choose MT48LC8M16A2TG-75 IT:G TR?

The MT48LC8M16A2TG-75 IT:G TR delivers a compact 128 Mbit SDRAM solution with PC100/PC133 synchronous operation, flexible timing options and industrial temperature capability. Its 8M × 16 organization, internal pipelined banks and programmable burst lengths make it suitable for systems that require predictable parallel SDRAM performance and efficient burst transfers.

This device is appropriate for designers seeking a proven SDRAM building block in a 54‑pin TSOP II package, supporting 3.3 V supply systems and operating across extended temperature ranges for robust field deployment.

Request a quote or submit a request for pricing and availability to get more information and lead‑time for the MT48LC8M16A2TG-75 IT:G TR.

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