MT48LC8M16A2TG-7E IT:G

The MT48LC8M16A2TG-7E IT:G is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M x 16 with a parallel memory interface in a 54‑pin TSOP II package. It is a fully synchronous, pipelined DRAM device designed for systems requiring PC100/PC133‑compliant SDRAM performance.

Targeted uses include industrial and commercial applications that need a compact 128‑Mbit SDRAM solution with support for programmable burst operation, auto refresh/self‑refresh modes, and a single 3.3 V supply.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal pipelined operation and multiple internal banks to hide row access/precharge latency.
• Memory Organization & Capacity  128 Mbit device organized as 8M × 16 with four internal banks.
• Performance & Timing  PC100‑ and PC133‑compliant; -7E speed grade targets 133 MHz operation with 2‑2‑2 RCD‑RP‑CL (15 ns CL). Product data lists a 133 MHz clock frequency and an access time of 5.4 ns.
• Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page) plus auto precharge, auto refresh, and self‑refresh modes (standard and low power options noted in device options).
• Voltage & I/O  Single 3.3 V ±0.3 V supply with LVTTL‑compatible inputs and outputs; supply range listed as 3.0 V to 3.6 V.
• Package  54‑pin TSOP II (400 mil / 10.16 mm width) plastic package for compact board-level integration.
• Operating Temperature  Industrial temperature option (IT) rated from –40°C to +85°C (TA).
• Reliability Features  Supports standard auto refresh intervals (4k refresh cycles) and device options for different refresh timing suited to commercial and industrial operation.

Typical Applications

• System Memory for PC100/PC133 Platforms  Use as synchronous DRAM memory in designs that require PC100/PC133‑class SDRAM performance.
• Industrial Control Systems  Provides 128 Mbit SDRAM storage in industrial electronics benefiting from the –40°C to +85°C operating range.
• Embedded Systems  Compact 54‑TSOP II package and parallel interface fit embedded designs needing synchronous burst access and standard 3.3 V supply.

Unique Advantages

• PC100/PC133 Compliance: Ensures predictable synchronous SDRAM timing behavior for designs targeting those speed classes.
• Low‑latency Operation: -7E timing supports 2‑2‑2 CAS latency at 133 MHz (15 ns target), enabling faster read cycles where supported by system timing.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) simplify memory access patterns and optimize burst transfers.
• Industrial Temperature Range: –40°C to +85°C rating (IT) supports deployment in harsher ambient conditions compared with commercial‑only devices.
• Standard 3.3 V Supply: Operates from a single 3.3 V ±0.3 V rail (listed supply range 3.0–3.6 V) to match common system power domains.
• Compact Board Footprint: 54‑pin TSOP II (400 mil) package offers a small surface‑mount option for space‑constrained PCBs.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2TG-7E IT:G provides a straightforward, industry‑standard 128 Mbit SDRAM option combining PC100/PC133‑class synchronous operation, programmable burst modes, and industrial temperature capability. Its 8M ×16 organization and 54‑pin TSOP II package make it suitable for compact system designs that require a parallel SDRAM interface and predictable timing.

As a Micron Technology product, this device is specified with detailed timing and refresh options to fit commercial and industrial applications where a 3.3 V single‑supply SDRAM is required. It is appropriate for designers seeking a reliable, specification‑driven memory component for systems operating up to 133 MHz clocking.

If you need pricing or availability for the MT48LC8M16A2TG-7E IT:G, request a quote or contact sales to discuss lead times and ordering options.