MT48LC8M16A2TG-75:G TR

The MT48LC8M16A2TG-75:G TR is a 128 Mbit SDR SDRAM device configured as 8M × 16 and implemented as 2 Meg × 16 × 4 banks. It is a fully synchronous, parallel-interface DRAM supplied in a 54-pin TSOP II package and targeted at applications requiring PC100/PC133‑class SDRAM behavior.

This device delivers pipelined, banked internal operation with programmable burst lengths and standard refresh/self‑refresh options, providing deterministic timing and flexible data-transfer modes for memory subsystems operating at a 133 MHz clock frequency with a 3.3 V ±0.3 V supply range (3.0–3.6 V).

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 (2 Meg × 16 × 4 banks), providing four internal banks for improved access concurrency and row‑access hiding.
• SDR SDRAM Compliance PC100- and PC133-compliant and fully synchronous with all signals registered on the positive edge of the system clock.
• Timing and Performance Operates at a 133 MHz clock frequency (speed grade -75) with an access time of 5.4 ns and support for CAS latency and RCD/RP timing per device timing table.
• Pipelined Operation & Burst Modes Internal pipelined operation permits column address changes every clock cycle and programmable burst lengths of 1, 2, 4, 8, or full page for flexible transfer sizing.
• Refresh and Power Modes Supports auto refresh, auto precharge, and self‑refresh modes (standard and low power options noted in the datasheet); 64 ms/4096-cycle refresh for commercial grade devices.
• I/O and Voltage LVTTL-compatible inputs and outputs; nominal single supply 3.3 V ±0.3 V (3.0–3.6 V) with specified write cycle time (word/page) of 15 ns.
• Commercial Temperature Range & Package Commercial operating temperature 0°C to +70°C (TA); supplied in a 54-pin TSOP II (0.400" / 10.16 mm width) package for board-level integration.

Unique Advantages

• PC100/PC133 Compatibility: Ensures timing alignment with PC100/PC133 memory subsystems for integration into legacy SDRAM designs.
• Banked, Pipelined Architecture: Four internal banks and pipelined column access help maintain throughput by overlapping row/column operations.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) let designs balance latency and bandwidth according to system needs.
• Standard and Low-Power Refresh Modes: Auto refresh and self‑refresh options provide design flexibility for power-managed memory states (low-power mode availability noted in datasheet options).
• Compact TSOP II Package: 54-pin TSOP II (0.400", 10.16 mm) supports compact board layouts while exposing a parallel DRAM interface for direct memory-controller connections.
• Wide Supply Range: 3.0–3.6 V operation (3.3 V ±0.3 V) accommodates standard 3.3 V system rails and tolerance on supply variations.

Why Choose MT48LC8M16A2TG-75:G TR?

The MT48LC8M16A2TG-75:G TR positions itself as a 128 Mbit, PC100/PC133-class SDR SDRAM option providing predictable, fully synchronous behavior with pipelined and banked internal architecture. Its combination of 133 MHz operation, programmable burst modes, and standard refresh/self‑refresh capabilities makes it suitable for designs requiring deterministic SDRAM timing and straightforward parallel interfacing.

Manufactured by Micron Technology, Inc., the device is delivered in a 54-pin TSOP II package and specified for commercial temperature operation and standard 3.3 V supply ranges, offering a clear, verifiable specification set for engineering and procurement teams integrating 128 Mbit DRAM into system designs.

Please request a quote or submit a pricing inquiry to receive availability and lead-time information for MT48LC8M16A2TG-75:G TR.