MT48LC8M16A2TG-7E:G TR

The MT48LC8M16A2TG-7E:G TR is a 128 Mbit synchronous DRAM device organized as 8M × 16 with a parallel memory interface. It implements SDR SDRAM architecture with internal pipelined operation, multiple internal banks and programmable burst lengths to support synchronous system memory requirements.

Designed for systems requiring a 128 Mbit parallel SDRAM in a 54‑pin TSOP II package, the device provides PC100/PC133 timing grades, single‑supply operation at 3.3 V (±0.3 V), and standard commercial temperature operation (0 °C to +70 °C).

Key Features

• Memory Architecture — 128 Mbit capacity organized as 8M × 16 with 4 internal banks for efficient row access and precharge handling.
• SDR SDRAM Core — Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Timing Grades and Performance — PC100 and PC133 compliant; the -7E speed grade targets 133 MHz with a 2-2-2 (RCD-RP-CL) timing profile as specified in the datasheet.
• Burst and Refresh — Programmable burst lengths (1, 2, 4, 8, full page), auto precharge modes, auto refresh and self refresh modes with 4096‑cycle refresh intervals documented in the datasheet.
• Interface and I/O — LVTTL‑compatible inputs and outputs and a parallel memory interface suitable for synchronous memory subsystems.
• Power — Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V) for standard commercial systems.
• Package and Temperature — 54‑pin TSOP II (400 mil, 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

• Synchronous memory subsystems — Acts as a parallel SDRAM component in systems that require PC100/PC133 synchronous DRAM devices for buffering and working memory.
• Embedded systems with parallel DRAM — Suitable where a 128 Mbit parallel SDRAM in a 54‑pin TSOP II package is required for system memory or frame buffering.
• Legacy or board‑level designs — Fits designs that employ parallel SDRAM interfaces and need a 3.3 V, commercial‑temperature memory device.

Unique Advantages

• Synchronous, pipelined operation: Registered inputs on the positive clock edge and internal pipelining permit predictable timing and the ability to change column addresses each cycle.
• Flexible burst and refresh options: Programmable burst lengths plus auto precharge, auto refresh and self‑refresh modes simplify controller design and refresh management.
• PC100/PC133 compatibility: Timing grades documented for PC100 and PC133 enable integration into systems targeting these clock domains.
• Compact TSOP II packaging: 54‑pin TSOP II (400 mil) provides a slim, board‑mountable footprint for designs constrained by PCB area.
• Standard 3.3 V supply: Single 3.3 V ±0.3 V operation aligns with common system power rails for easy integration.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2TG-7E:G TR positions itself as a straightforward 128 Mbit SDRAM option for designers needing a parallel, synchronous memory device in a 54‑pin TSOP II footprint. With PC100/PC133 timing options, internal bank architecture and a range of programmable burst and refresh modes, it supports deterministic memory behavior in commercial-temperature systems running from a standard 3.3 V supply.

Choose this device for designs that require a documented SDRAM timing profile, LVTTL-compatible I/O and a compact package for board-level integration. The device’s documented features and timing grades make it suitable for systems and customers building or maintaining parallel SDRAM memory subsystems.

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