MT48LC8M16A2TG-75:G

The MT48LC8M16A2TG-75:G is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It is a fully synchronous device offering PC100- and PC133-compliant operation and supports standard SDRAM features such as programmable burst lengths, auto precharge, and auto refresh.

Designed for commercial-temperature systems, this device delivers system memory density in a compact 54-pin TSOP II package, operating from a single 3.0 V to 3.6 V supply and supporting clock frequencies up to 133 MHz.

Key Features

• Memory Architecture — 128 Mbit SDRAM organized as 8M × 16 with four internal banks to improve row access and precharge handling.
• Standards Compliance — PC100 and PC133 compliant; fully synchronous with all signals registered on the positive edge of the system clock.
• Performance & Timing — Rated for 133 MHz clock frequency (–75 speed grade); documented timing includes CL/RCD/RP settings and a listed access time of 5.4 ns and write cycle time (word/page) of 15 ns.
• Refresh & Power Modes — Supports auto refresh and self-refresh modes (standard and low power options noted in device family documentation) and a 64 ms/4096-cycle refresh for commercial devices.
• Interface & Operation — Parallel SDRAM interface with programmable burst lengths (1, 2, 4, 8, or full page) and LVTTL-compatible inputs/outputs as specified in the device family data.
• Supply & Temperature — Single-supply operation from 3.0 V to 3.6 V with a commercial operating temperature range of 0°C to +70°C (TA).
• Package — 54-pin TSOP II (0.400", 10.16 mm width) plastic package (TG revision) suitable for surface-mount assembly.

Typical Applications

• PC100/PC133 memory subsystems — Use as a 128 Mbit SDRAM component in systems requiring PC100- or PC133-compliant synchronous DRAM.
• Embedded system memory — Compact 54-pin TSOP II package and 8M × 16 organization for embedded designs that require parallel SDRAM density in a small footprint.
• Systems requiring standard SDRAM features — Designs that leverage programmable burst lengths, auto refresh, and internal bank architecture for predictable memory operation.

Unique Advantages

• Standards-aligned timing — PC100/PC133 compliance ensures documented timing parameters for integration into synchronous memory designs.
• Flexible burst and refresh options — Programmable burst lengths plus auto and self-refresh modes help match memory behavior to system access patterns and power requirements.
• Compact surface-mount package — 54-pin TSOP II (400 mil) offers a high-density footprint for space-constrained board layouts.
• Narrow supply window with tolerance — Single 3.0 V to 3.6 V supply aligns with common 3.3 V system rails while documenting operating margins.
• Commercial temperature rating — Specified for 0°C to +70°C operation for standard commercial applications.

Why Choose MT48LC8M16A2TG-75:G?

The MT48LC8M16A2TG-75:G provides a straightforward, standards-based 128 Mbit SDRAM solution with documented PC100/PC133 timing, programmable burst operation, and built-in refresh capabilities. Its 8M × 16 organization and 54-pin TSOP II package make it suitable for designs that require parallel SDRAM density in a compact footprint.

This device is appropriate for commercial-temperature systems that need predictable synchronous memory behavior, clear timing parameters, and compatibility with common 3.3 V system supplies. The family-level documentation provides additional configuration and timing options to support system integration and design planning.

Request a quote or submit an RFQ to obtain pricing, availability, and lead-time information for the MT48LC8M16A2TG-75:G.