MT48LC8M32B2B5-7 TR
| Part Description |
IC DRAM 256MBIT PAR 90VFBGA |
|---|---|
| Quantity | 603 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-VFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 6 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 90-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC8M32B2B5-7 TR – IC DRAM 256MBIT PAR 90VFBGA
The MT48LC8M32B2B5-7 TR is a 256 Mbit synchronous DRAM organized as 8M × 32 (2M × 32 × 4 banks) in a 90-ball VFBGA package. It implements a fully synchronous, pipelined SDRAM core with internal banks and a parallel memory interface.
Targeted for systems requiring PC100 functionality and commercial temperature operation, this device delivers a 143 MHz clock-grade timing (-7 speed grade), a 6 ns access time (CL = 3), programmable burst lengths, and standard +3.3 V supply operation (3.0 V–3.6 V).
Key Features
- Core / Architecture Fully synchronous SDRAM with internal pipelined operation; column addresses can be changed every clock cycle and internal banks hide row access/precharge.
- Memory Organization & Capacity 256 Mbit capacity configured as 8M × 32 (2M × 32 × 4 banks) to support multi-bank access patterns.
- Performance & Timing -7 speed grade: 143 MHz clock frequency and 6.0 ns access time (CL = 3). Supports CAS latencies of 1, 2, and 3 and a 14 ns write cycle time (word page).
- Burst & Command Flexibility Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including Concurrent Auto Precharge), Auto Refresh, and Self Refresh modes.
- Power & Voltage Single-supply operation at +3.3 V ±0.3 V (3.0 V–3.6 V).
- Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs for standard signal levels.
- Refresh & Retention 64 ms auto-refresh interval implemented as 4,096 refresh cycles (15.6 µs/row) to maintain data integrity in refresh modes.
- Package & Temperature 90-ball VFBGA (8 mm × 13 mm) package; commercial operating temperature range 0°C to 70°C (TA).
Typical Applications
- PC100-compliant subsystems Use in memory subsystems and modules where PC100 functionality is required, leveraging the device’s PC100 feature set.
- 3.3V SDRAM designs Systems and boards that require SDRAM operation from a single +3.3 V supply (3.0 V–3.6 V).
- Space-constrained boards Compact 90-ball VFBGA (8 mm × 13 mm) package suitable for designs with limited PCB area.
Unique Advantages
- Synchronous, pipelined operation: Column address changes every clock cycle and internal pipelining support efficient read/write sequencing.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning for different access patterns and system needs.
- Banked memory architecture: Four internal banks (2M × 32 × 4 configuration) allow overlapping of row operations to improve effective throughput.
- Configurable timing: Support for CAS latencies 1, 2, and 3 provides timing flexibility across system designs.
- Comprehensive refresh modes: Auto Refresh and Self Refresh with a 4,096-cycle (64 ms) refresh scheme support power management and data retention.
- Compact FBGA package: 90-ball VFBGA (8 mm × 13 mm) minimizes PCB footprint while delivering a full 32-bit data bus.
Why Choose IC DRAM 256MBIT PAR 90VFBGA?
The MT48LC8M32B2B5-7 TR combines a synchronized, pipelined SDRAM architecture with a 256 Mbit ×32 organization and a compact 90-ball VFBGA package to meet design requirements for PC100-class timing and 3.3 V operation. Its programmable burst lengths, internal banks, and multiple CAS latency options provide design flexibility for a range of performance profiles.
Specified for commercial temperature operation (0°C to 70°C) and supported by a comprehensive feature set including Auto/Concurrent Auto Precharge, Auto Refresh, and Self Refresh, this Micron SDRAM device is suitable for systems that require standard SDRAM functionality in a space-efficient package.
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