MT48LC8M32B2B5-7 TR

IC DRAM 256MBIT PAR 90VFBGA
Part Description

IC DRAM 256MBIT PAR 90VFBGA

Quantity 603 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time6 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC8M32B2B5-7 TR – IC DRAM 256MBIT PAR 90VFBGA

The MT48LC8M32B2B5-7 TR is a 256 Mbit synchronous DRAM organized as 8M × 32 (2M × 32 × 4 banks) in a 90-ball VFBGA package. It implements a fully synchronous, pipelined SDRAM core with internal banks and a parallel memory interface.

Targeted for systems requiring PC100 functionality and commercial temperature operation, this device delivers a 143 MHz clock-grade timing (-7 speed grade), a 6 ns access time (CL = 3), programmable burst lengths, and standard +3.3 V supply operation (3.0 V–3.6 V).

Key Features

  • Core / Architecture  Fully synchronous SDRAM with internal pipelined operation; column addresses can be changed every clock cycle and internal banks hide row access/precharge.
  • Memory Organization & Capacity  256 Mbit capacity configured as 8M × 32 (2M × 32 × 4 banks) to support multi-bank access patterns.
  • Performance & Timing  -7 speed grade: 143 MHz clock frequency and 6.0 ns access time (CL = 3). Supports CAS latencies of 1, 2, and 3 and a 14 ns write cycle time (word page).
  • Burst & Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including Concurrent Auto Precharge), Auto Refresh, and Self Refresh modes.
  • Power & Voltage  Single-supply operation at +3.3 V ±0.3 V (3.0 V–3.6 V).
  • Interface & I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for standard signal levels.
  • Refresh & Retention  64 ms auto-refresh interval implemented as 4,096 refresh cycles (15.6 µs/row) to maintain data integrity in refresh modes.
  • Package & Temperature  90-ball VFBGA (8 mm × 13 mm) package; commercial operating temperature range 0°C to 70°C (TA).

Typical Applications

  • PC100-compliant subsystems  Use in memory subsystems and modules where PC100 functionality is required, leveraging the device’s PC100 feature set.
  • 3.3V SDRAM designs  Systems and boards that require SDRAM operation from a single +3.3 V supply (3.0 V–3.6 V).
  • Space-constrained boards  Compact 90-ball VFBGA (8 mm × 13 mm) package suitable for designs with limited PCB area.

Unique Advantages

  • Synchronous, pipelined operation: Column address changes every clock cycle and internal pipelining support efficient read/write sequencing.
  • Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning for different access patterns and system needs.
  • Banked memory architecture: Four internal banks (2M × 32 × 4 configuration) allow overlapping of row operations to improve effective throughput.
  • Configurable timing: Support for CAS latencies 1, 2, and 3 provides timing flexibility across system designs.
  • Comprehensive refresh modes: Auto Refresh and Self Refresh with a 4,096-cycle (64 ms) refresh scheme support power management and data retention.
  • Compact FBGA package: 90-ball VFBGA (8 mm × 13 mm) minimizes PCB footprint while delivering a full 32-bit data bus.

Why Choose IC DRAM 256MBIT PAR 90VFBGA?

The MT48LC8M32B2B5-7 TR combines a synchronized, pipelined SDRAM architecture with a 256 Mbit ×32 organization and a compact 90-ball VFBGA package to meet design requirements for PC100-class timing and 3.3 V operation. Its programmable burst lengths, internal banks, and multiple CAS latency options provide design flexibility for a range of performance profiles.

Specified for commercial temperature operation (0°C to 70°C) and supported by a comprehensive feature set including Auto/Concurrent Auto Precharge, Auto Refresh, and Self Refresh, this Micron SDRAM device is suitable for systems that require standard SDRAM functionality in a space-efficient package.

Request a quote or submit an inquiry for pricing and availability of the MT48LC8M32B2B5-7 TR.

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