MT48LC8M32B2F5-7 IT TR

The MT48LC8M32B2F5-7 IT TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with a parallel interface in a 90-ball VFBGA (8 mm × 13 mm) package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and features targeted timing for 143 MHz operation (–7 speed grade) with a 6 ns access time at CL = 3.

Designed for systems that require a 256 Mbit parallel SDRAM device with industrial temperature capability, this Micron device supports programmable burst lengths, auto-refresh and self-refresh modes, and operates from a single +3.3 V ±0.3 V supply.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal pipelined operation and internal banks (2M × 32 × 4 banks) for efficient row access and precharge management.
• Memory Organization  8M × 32 organization delivering 256 Mbit total capacity with a 32-bit data path.
• Timing & Performance  –7 speed grade: 143 MHz clock frequency and 6.0 ns access time (CL = 3). Supports CAS latencies of 1, 2, and 3 and a write cycle time (word/page) of 14 ns.
• Burst and Command Support  Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including Concurrent Auto Precharge), Auto Refresh and Self Refresh modes.
• Refresh  64 ms refresh interval with 4,096 refresh cycles (15.6 μs/row) to maintain data integrity in DRAM arrays.
• Interface / I/O  LVTTL-compatible inputs and outputs with fully synchronous signaling; all signals registered on the positive edge of the system clock.
• Power  Single +3.3 V ±0.3 V supply (3.0 V to 3.6 V operating range).
• Package & Temperature  90-ball VFBGA (8 mm × 13 mm) package; industrial operating temperature range of –40 °C to +85 °C (IT option available on the –7 speed grade).

Typical Applications

• PC100-compliant systems  Devices and modules requiring PC100 functionality and synchronous SDRAM timing.
• Industrial embedded equipment  Designs needing memory rated for an industrial temperature range (–40 °C to +85 °C).
• Parallel SDRAM memory subsystems  Applications requiring a 32-bit parallel data path and 256 Mbit density in a compact FBGA package.

Unique Advantages

• Industrial temperature rating: Rated for –40 °C to +85 °C (IT), enabling deployment in temperature-variable environments.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) provide adaptable read/write sequencing for different access patterns.
• High-speed synchronous operation: Designed for 143 MHz operation with 6 ns access time (–7), meeting timing needs for PC100-class synchronous systems.
• Power simplicity: Single +3.3 V ±0.3 V supply minimizes power-supply complexity in system design.
• Compact FBGA footprint: 90-ball VFBGA (8 mm × 13 mm) package offers high density in a space-efficient form factor.
• Robust DRAM maintenance modes: Auto Refresh, Self Refresh and a 4K refresh cycle support reliable data retention and power management.

Why Choose IC DRAM 256MBIT PAR 90VFBGA?

The MT48LC8M32B2F5-7 IT TR delivers a balanced combination of synchronous SDRAM performance, industrial temperature support and a compact 90-ball VFBGA package. Its 8M × 32 organization, internal banking, programmable burst lengths and standard refresh modes make it suitable for systems that require a 256 Mbit parallel SDRAM component with PC100-class timing and 3.3 V operation.

This device is appropriate for engineers specifying a proven SDRAM building block with deterministic timing (143 MHz/6 ns for the –7 grade), LVTTL I/O signaling and industry-minded thermal range. The device’s standard DRAM features—Auto Precharge, Auto Refresh and Self Refresh—help maintain data integrity and control refresh behavior across deployment scenarios.

Request a quote or submit a request for pricing and availability to evaluate MT48LC8M32B2F5-7 IT TR for your next design.