MT48LC8M32B2P-7 IT TR

The MT48LC8M32B2P-7 IT TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with 4 internal banks. It is a parallel-interface, volatile memory device designed for systems requiring synchronous DRAM operation with programmable burst modes and CAS latency options.

Key value propositions include PC100 functionality with fully synchronous, pipelined operation, support for self-refresh and auto-precharge modes, and an industrial operating temperature range for deployment in temperature-sensitive applications.

Key Features

• Core / Architecture 8M × 32 memory organization with 4 internal banks for hidden row access and precharge; fully synchronous operation with all signals registered on the positive clock edge.
• Memory & Mode 256 Mbit DRAM with programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including Concurrent Auto Precharge), Auto Refresh, and Self Refresh modes.
• Timing & Performance -7 speed grade: 7 ns cycle time (143 MHz) with 6.0 ns access time (CAS latency CL = 3). Supports CAS latency of 1, 2, and 3.
• Power Single-supply operation at +3.3 V (specified ±0.3 V), voltage supply range listed as 3.0 V to 3.6 V.
• Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs; internal pipelined operation allows column address changes every clock cycle.
• Refresh 64 ms self-refresh interval with 4,096-cycle refresh (15.6 µs/row) to maintain data integrity.
• Package 86-pin TSOP II package (0.400", 10.16 mm width) suitable for surface-mount assembly.
• Operating Range Industrial temperature rating: –40 °C to +85 °C (TA) — available on the -7 speed grade.

Typical Applications

• Embedded Memory Expansion Use as a 256 Mbit parallel SDRAM in designs that require synchronous DRAM with programmable burst lengths and multi-bank operation.
• System Buffering Acts as a parallel buffer memory for systems needing pipelined column access and fast CAS latency options.
• Industrial Electronics Suited for industrial-temperature applications that require reliable operation from –40 °C to +85 °C at the -7 speed grade.

Unique Advantages

• Programmable Burst Modes: Burst lengths of 1, 2, 4, 8 or full page enable flexible data transfer patterns to match system requirements.
• Multi-Bank Architecture: Four internal banks hide row access and precharge latency, improving effective throughput for mixed access patterns.
• Industrial Temperature Support: Specified operation from –40 °C to +85 °C for the -7 grade supports deployment in temperature-sensitive environments.
• Standard Voltage Supply: Single +3.3 V supply (3.0–3.6 V range) simplifies power design in systems built around 3.3 V rails.
• PC100-Compatible Timing: Documented PC100 functionality and fully synchronous LVTTL I/O enable predictable timing behavior in synchronous memory systems.
• Surface-Mount TSOP II Package: 86-pin TSOP (0.400", 10.16 mm width) supports compact board layouts and standard assembly processes.

Why Choose IC DRAM 256MBIT PAR 86TSOP II?

The MT48LC8M32B2P-7 IT TR provides a compact, industrial-temperature SDRAM solution with a 256 Mbit capacity, multi-bank architecture, and flexible burst and CAS configurations. Its combination of PC100 functionality, LVTTL-compatible I/O, and self-refresh/auto-precharge features make it suitable for systems that require predictable synchronous memory behavior and refresh management.

This device is appropriate for designs that need a parallel SDRAM with defined timing (143 MHz / 6 ns access at the -7 grade), 3.3 V supply compatibility, and an 86-pin TSOP II package. It offers designers a specification-driven memory option where industrial temperature range and standard SDRAM features are required.

Request a quote or submit an inquiry to receive pricing and availability for the MT48LC8M32B2P-7 IT TR and to discuss volume or lead-time requirements.