MT48LC8M32B2TG-7 TR

The MT48LC8M32B2TG-7 TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with a parallel memory interface. It implements fully synchronous operation with internal pipelining and banking to support PC100-class performance and predictable access timing.

Designed for commercial-temperature systems, this device delivers 143 MHz clock operation (–7 speed grade), 6 ns access time (CL = 3), programmable burst lengths and self-refresh/auto-refresh features for standard system memory requirements.

Key Features

• Core / Architecture  Synchronous DRAM (SDRAM) with fully synchronous operation—all signals registered on the positive edge of the system clock and internal pipelined operation.
• Memory Organization  256 Mbit arranged as 8M × 32 with 4 internal banks to improve throughput and hide row access/precharge latency.
• Performance & Timing  –7 speed grade: 143 MHz clock frequency and 6.0 ns access time (CL = 3). Supports CAS latency options of 1, 2, and 3 and programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh & Power Management  Auto Refresh, Concurrent Auto Precharge, and Self Refresh modes are supported; 64 ms, 4,096-cycle refresh (15.6 μs/row) timing included. Single +3.3 V supply (specified 3.0 V to 3.6 V).
• Interface & I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for straightforward system integration.
• Package & Temperature  86-pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• PC100-class memory subsystems  Designed for systems requiring PC100 functionality and the timing/latency characteristics of standard SDRAM.
• Commercial embedded systems  Parallel x32 SDRAM in an 86‑pin TSOP II footprint for compact board-level memory integration within 0°C to +70°C operating environments.
• Systems requiring predictable burst access  Programmable burst lengths and internal banking enable consistent read/write burst behavior in designs that use parallel SDRAM.

Unique Advantages

• Standard SDRAM timing  –7 speed grade timing (143 MHz, 6 ns access) provides clear, verifiable performance targets for system timing closure.
• Flexible burst and latency options  Programmable burst lengths and support for CAS latency 1, 2, and 3 let designers match memory behavior to system access patterns.
• Integrated refresh and low-power modes  Auto Refresh and Self Refresh modes reduce external refresh management and support power-managed operation.
• Parallel x32 organization  8M × 32 format with four internal banks offers straightforward data path width and capacity for designs needing 256 Mbit memory in a single device.
• Compact TSOP II package  86-pin TSOP (400 mil) package provides a board-friendly form factor for space-constrained commercial systems.

Why Choose IC DRAM 256MBIT PAR 86TSOP II?

The MT48LC8M32B2TG-7 TR positions itself as a commercial-temperature SDRAM solution that balances clear timing behavior, flexible burst and latency options, and standard 3.3 V operation. Its 8M × 32 organization and 86-pin TSOP II package make it suitable for designs that require a 256 Mbit parallel SDRAM with PC100-class functionality.

This device is appropriate for engineers designing commercial embedded platforms or memory subsystems that need deterministic SDRAM timing, supported refresh modes, and a compact package option for board-level integration.

Request a quote or submit an RFQ to obtain pricing and lead-time information for the MT48LC8M32B2TG-7 TR.