MT48LC8M8A2P-75 IT:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 113 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 8 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M8A2P-75 IT:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC8M8A2P-75 IT:G TR is a 64 Mbit synchronous DRAM (SDRAM) organized as 8M × 8 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous operation with internal pipelined architecture and multiple internal banks to support high-throughput, low-latency memory access.
This device targets systems requiring PC133-class SDRAM performance and industrial temperature operation (–40°C to +85°C). Note: the datasheet indicates this device is not recommended for new designs.
Key Features
- Memory Type & Organization 64 Mbit volatile SDRAM organized as 8M × 8 with four internal banks for interleaved row access.
- Speed & Timing PC133-class operation with a clock frequency of 133 MHz and an access time specification of 5.4 ns; -75 timing option corresponds to 7.5 ns @ CL=3 in the datasheet.
- Interface & Operation Parallel SDRAM interface with fully synchronous control (all signals registered on the positive edge of the system clock) and internal pipelined operation allowing column address changes every clock cycle.
- Burst & Refresh Features Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh, and Self Refresh modes with a 64 ms, 4,096-cycle refresh requirement.
- Power & I/O Single +3.3 V ±0.3 V supply range (product-level voltage supply listed as 3.0 V to 3.6 V) and LVTTL-compatible inputs/outputs.
- Package & Mounting 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for surface-mount applications.
- Environmental Range Industrial operating temperature from –40°C to +85°C (TA).
- Additional Timing Write cycle time (word/page) specified at 15 ns.
Typical Applications
- PC100/PC133-class memory systems Use where PC66/PC100/PC133-compliant SDRAM behavior and timing are required.
- Industrial embedded systems Boards and controllers that require SDRAM operation across an industrial temperature range (–40°C to +85°C).
- Parallel SDRAM memory expansion Designs needing a compact 64 Mbit ×8 SDRAM in a 54-pin TSOP II package for board-level memory density.
Unique Advantages
- PC133-class timing: Enables operation at up to 133 MHz clock frequency and CL=3 timing for systems targeting PC133 performance.
- Internal banking and pipelining: Four internal banks and pipelined column operation reduce effective latency for sequential accesses.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) support varied transfer sizing for throughput optimization.
- Industrial temperature rating: Specified for –40°C to +85°C operation to support temperature-critical embedded applications.
- Standard 3.3 V supply and LVTTL I/O: Simplifies interface design with common system voltage and logic levels.
- Compact TSOP II package: 54-pin 0.400" TSOP II offers board-space-efficient mounting for dense designs.
Why Choose MT48LC8M8A2P-75 IT:G TR?
The MT48LC8M8A2P-75 IT:G TR provides a straightforward 64 Mbit SDRAM solution with PC133-class timing, internal banking, and standard +3.3 V LVTTL interfaces. Its 8M × 8 organization and compact 54-pin TSOP II package make it suitable for designs that need a parallel SDRAM device with industrial temperature capability.
Engineers specifying this device benefit from explicit timing and refresh characteristics, programmable burst modes, and typical SDRAM features (Auto Precharge, Auto Refresh, Self Refresh) documented in the manufacturer datasheet, enabling predictable integration into existing SDRAM controller architectures.
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