MT48LC8M8A2P-75:G

The MT48LC8M8A2P-75:G is a 64 Mbit synchronous DRAM organized as 8M × 8 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It implements fully synchronous SDRAM architecture with internal pipelined operation and banked memory to support rapid column access and hidden row precharge.

Key electrical and timing characteristics include a 133 MHz clock rating, a 5.4 ns access time, and single-supply operation at 3.3 V ±0.3 V (3.0 V–3.6 V). The device is specified for commercial temperature operation (0 °C to +70 °C). Note: the datasheet indicates this device is not recommended for new designs.

Key Features

• Memory Core and Organization 64 Mbit capacity organized as 8M × 8 with four internal banks for improved throughput and row/column management.
• SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation enabling column address changes every clock cycle.
• Performance PC66, PC100, and PC133 compliance with a clock frequency rating up to 133 MHz and an access time of 5.4 ns.
• Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge including concurrent auto precharge, Auto Refresh modes, and a 64 ms / 4,096-cycle refresh scheme.
• Power and I/O Single +3.3 V ±0.3 V supply (3.0 V–3.6 V) with LVTTL-compatible inputs and outputs and standard and low-power self-refresh modes documented.
• Timing Options Multiple timing variants are provided in the family; this part is offered with a -75 timing grade (7.5 ns cycle time at CL = 3 as listed in the datasheet options).
• Package and Temperature 54-pin TSOP II (400 mil) plastic package; specified operating temperature range 0 °C to +70 °C (commercial).

Typical Applications

• PC133/Legacy Parallel Memory Systems Use where PC66/PC100/PC133-compatible SDRAM with a parallel interface and 64 Mbit capacity is required.
• Embedded Systems with Parallel SDRAM Suitable for embedded designs that require a standardized 3.3 V parallel SDRAM solution in a compact TSOP II package.
• Memory Expansion Modules Employed in memory modules or boards that need 8M × 8 organization and banked SDRAM operation for burst reads/writes.

Unique Advantages

• PC133 Compatibility: Documented compliance with PC66, PC100, and PC133 timing classes enables straightforward integration into systems targeting those clock standards.
• Banked, Pipelined Operation: Four internal banks and pipelined column access allow address changes every clock cycle to improve data throughput within the constraints of the device.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) and Auto Precharge features simplify controller implementation for varied access patterns.
• Standard 3.3 V Supply: Single-supply operation at 3.3 V ±0.3 V aligns with common system power rails and LVTTL I/O compatibility.
• Compact TSOP II Package: 54-pin TSOP II (0.400", 10.16 mm) form factor provides a space-efficient footprint for PCB-level memory integration.
• Documented Commercial Grade: Specified operating range of 0 °C to +70 °C for commercial applications, with timing and refresh details provided in the datasheet.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC8M8A2P-75:G provides a compact, parallel SDRAM solution delivering PC133-class synchronous performance in a 64 Mbit density. Its combination of banked memory architecture, programmable burst modes, and standard 3.3 V operation supports designs that require predictable timing, refresh control, and LVTTL-compatible I/O in a 54-pin TSOP II package.

This device is suited to projects and maintenance scenarios where a documented commercial-grade SDRAM with explicit timing, refresh, and package specifications is required. Refer to the manufacturer datasheet for detailed timing tables, pin assignments, and operational modes; note that the datasheet indicates this part is not recommended for new designs.

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