MT52L1G32D4PG-093 WT ES:B
| Part Description |
IC DRAM 32GBIT 1067MHZ 178FBGA |
|---|---|
| Quantity | 957 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 178-FBGA (12x11.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.067 GHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 178-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT52L1G32D4PG-093 WT ES:B – 32 Gbit Mobile LPDDR3 DRAM, 1.067 GHz, 178-FBGA
The MT52L1G32D4PG-093 WT ES:B is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR3 SDRAM. It is organized as 1G × 32 and operates with a clock frequency of 1.067 GHz and a 1.2 V supply.
Offered by Micron Technology Inc., this device is provided in a 178-ball VFBGA package and supports an operating temperature range of -30°C to 85°C, targeting designs that require high-density LPDDR3 memory in a compact package.
Key Features
- Memory Architecture Organized as 1G × 32 to deliver a total density of 32 Gbit for high-capacity implementations.
- Technology and Performance Mobile LPDDR3 SDRAM technology with a clock frequency of 1.067 GHz for LPDDR3-class operation.
- Power Operates from a 1.2 V supply consistent with LPDDR3 voltage requirements.
- Package Supplied in a 178-VFBGA package case; supplier package specified as 178-FBGA (12×11.5) for compact board-level integration.
- Memory Type Volatile DRAM suitable for transient data storage in system memory subsystems.
- Temperature Range Rated for operation from -30°C to 85°C (TC), supporting a variety of temperature environments.
Typical Applications
- Mobile LPDDR3 systems Use where Mobile LPDDR3 SDRAM is required and a 32 Gbit density is needed.
- High-density memory modules Integration into memory modules or subsystems that require 1G × 32 components to achieve target capacities.
- Embedded memory subsystems Embedded designs that leverage LPDDR3 DRAM technology and compact FBGA packaging for board-level space savings.
Unique Advantages
- High density: 32 Gbit capacity enables greater memory per device without multiple components.
- LPDDR3 performance: Mobile LPDDR3 SDRAM at 1.067 GHz provides timing aligned with LPDDR3-class designs.
- Low-voltage operation: 1.2 V supply supports power-sensitive designs that follow LPDDR3 voltage domains.
- Compact package: 178-VFBGA / 178-FBGA (12×11.5) package supports dense PCB layouts and space-constrained assemblies.
- Wide temperature range: -30°C to 85°C rating supports a range of thermal environments.
Why Choose IC DRAM 32GBIT 1067MHZ 178FBGA?
The MT52L1G32D4PG-093 WT ES:B provides a high-density LPDDR3 DRAM option from Micron Technology Inc., combining a 1G × 32 organization and 32 Gbit capacity with 1.067 GHz operation and 1.2 V supply. Its FBGA packaging and specified thermal range make it suitable for designs that require compact, high-capacity LPDDR3 memory building blocks.
This device is appropriate for engineers designing LPDDR3-based memory subsystems who require verifiable device-level specifications for capacity, clocking, voltage, packaging, and operating temperature in their product BOM and layout considerations.
Request a quote or submit an inquiry to receive pricing and availability information for MT52L1G32D4PG-093 WT ES:B.
