MT52L1G32D4PG-093 WT:B TR

The MT52L1G32D4PG-093 WT:B TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR3 SDRAM technology. It is organized as 1G × 32 with a 1.066 GHz clock frequency and operates from a 1.2 V supply.

Packaged in a 178-pin VFBGA (12 × 11.5 mm) and rated for an operating temperature range of −30°C to 85°C (TC), this Micron Technology Inc. memory device is intended for designs that require high-density LPDDR3 memory in compact BGA form factors.

Key Features

• Memory Technology Mobile LPDDR3 SDRAM technology providing standard DRAM behavior suitable for systems using LPDDR3 memory architectures.
• Density & Organization 32 Gbit capacity organized as 1G × 32 to support high-density memory requirements in a single device.
• Clock Frequency 1.066 GHz clock rate for data transfer operations.
• Voltage Supply Single 1.2 V supply voltage specified for device operation.
• Package 178-FBGA (178-VFBGA) package with 12 × 11.5 mm footprint for compact board-level integration.
• Memory Format & Mounting DRAM, volatile memory type intended for surface-mounted applications.
• Operating Temperature Rated for −30°C to 85°C (TC), supporting a broad commercial/industrial temperature window.

Typical Applications

• Mobile devices High-density LPDDR3 memory for mobile platforms that require compact, board-level DRAM solutions.
• Embedded systems On-board DRAM for embedded designs that need 32 Gbit memory capacity in a 178-FBGA package.
• Handheld electronics Compact package and 1.2 V operation support integration into handheld and portable electronic products.

Unique Advantages

• High density in a single device: 32 Gbit capacity (1G × 32) reduces the need for multiple memory components when high capacity is required.
• LPDDR3 performance envelope: 1.066 GHz clock frequency aligns with LPDDR3 performance targets for bandwidth-sensitive applications.
• Compact BGA footprint: 178-FBGA (12 × 11.5 mm) enables space-efficient board layouts for compact systems.
• Low-voltage operation: 1.2 V supply supports power-conscious designs that use LPDDR3 memory rails.
• Wide operating temperature: −30°C to 85°C (TC) rating provides headroom for a range of commercial and industrial environments.
• Single-vendor sourcing: Manufactured by Micron Technology Inc., providing consistent device specification and traceability.

Why Choose MT52L1G32D4PG-093 WT:B TR?

The MT52L1G32D4PG-093 WT:B TR positions as a high-density LPDDR3 DRAM option for designs that require 32 Gbit of volatile memory in a compact BGA package. Its 1.066 GHz clock rate, 1.2 V operation, and −30°C to 85°C temperature rating make it suitable for boards where density, LPDDR3 technology, and a small footprint are primary considerations.

This Micron device is appropriate for engineers and procurement teams specifying on-board mobile DRAM for mobile, embedded and handheld systems that need a single-device 32 Gbit LPDDR3 solution with defined electrical and thermal characteristics.

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