MT52L1G32D4PG-107 WT:B TR

The MT52L1G32D4PG-107 WT:B TR is a volatile mobile SDRAM device implementing LPDDR3 technology with a memory density of 32 Gbit organized as 1G × 32. It operates at a clock frequency of 933 MHz and uses a 1.2 V supply.

Designed for compact, high-density memory applications, this device is supplied in a 178-ball FBGA package and supports operation across a temperature range of −30°C to 85°C.

Key Features

• Memory Type & Technology Mobile LPDDR3 SDRAM offering volatile DRAM storage suitable for systems requiring LPDDR3 architecture.
• Density & Organization 32 Gbit capacity organized as 1G × 32, delivering high memory density in a single device.
• Clock Frequency Supports a clock frequency of 933 MHz to meet timing requirements for LPDDR3 operation.
• Power Supply Single 1.2 V voltage supply for core operation.
• Package 178-ball VFBGA (178-FBGA) package, specified as 12 × 11.5 mm, for compact mounting and board-level integration.
• Operating Temperature Specified operating temperature range of −30°C to 85°C (TC), supporting deployment across a broad thermal envelope.
• Mounting & Format FBGA surface-mount package in a DRAM format intended for board-level assembly.

Typical Applications

• Mobile devices Compact LPDDR3 memory for systems that require high-density DRAM in space-constrained packages.
• Embedded systems On-board memory for embedded platforms needing 32 Gbit volatile storage with a small package footprint.
• Memory modules and subsystems Building block for high-density memory assemblies where FBGA packaging and LPDDR3 technology are required.

Unique Advantages

• High single-device density: 32 Gbit in a single 1G × 32 organization enables substantial memory capacity without multiple parts.
• Compact FBGA package: 178-ball VFBGA (12 × 11.5 mm) minimizes board area for designs with tight space constraints.
• LPDDR3 technology at 933 MHz: Supports LPDDR3 clocking up to 933 MHz for designs targeting that interface and timing.
• Low-voltage operation: 1.2 V supply supports lower-power system designs compared to higher-voltage alternatives.
• Wide operating temperature: Rated for −30°C to 85°C, enabling operation across varied thermal environments.
• Single-source manufacturer: Manufactured by Micron Technology Inc., providing traceability to a known DRAM vendor.

Why Choose MT52L1G32D4PG-107 WT:B TR?

The MT52L1G32D4PG-107 WT:B TR positions itself as a high-density LPDDR3 DRAM option for designs that require 32 Gbit of volatile memory in a compact FBGA package. Its 933 MHz clock support, 1.2 V operation, and 178-ball FBGA footprint make it suitable for integration where board space and power are constrained.

Engineers specifying this device benefit from clear, verifiable specifications—memory density, organization, operating frequency, package dimensions, and temperature range—backed by Micron Technology Inc. This makes the device appropriate for designs that need scalable high-density DRAM from an established memory manufacturer.

For pricing, availability, or to request a formal quote, contact the supplier's sales or quoting channel to discuss lead times and order quantities.