MT52L1G64D8QC-107 WT:B

The MT52L1G64D8QC-107 WT:B is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR3 SDRAM architecture and manufactured by Micron Technology Inc. It provides a 1G x 64 memory organization with a 933 MHz clock frequency and a 1.2 V supply.

This device targets mobile LPDDR3 memory designs where high density, defined clock performance, and a compact 253-VFBGA (12×12) package are required. The specified operating temperature range of -30°C to 85°C supports deployment across a range of environmental conditions.

Key Features

• Memory Core Mobile LPDDR3 SDRAM architecture providing volatile DRAM functionality for memory subsystems.
• Density & Organization 64 Gbit total capacity organized as 1G × 64, suitable for designs requiring high-density memory.
• Clock Performance 933 MHz clock frequency for systems designed around this operating rate.
• Power Nominal supply voltage of 1.2 V as specified for the device.
• Package 253-VFBGA package, 12×12 format, for compact board-level integration.
• Temperature Range Rated for operation from -30°C to 85°C (TC), enabling use across a broad thermal envelope.
• Memory Format DRAM, volatile memory suitable for dynamic data storage in runtime systems.

Typical Applications

• Mobile Devices Designed for mobile LPDDR3 memory implementations where high-density volatile memory is required.
• Handheld and Portable Electronics Provides compact, high-capacity DRAM in a 253-VFBGA (12×12) package for space-constrained designs.
• Embedded Memory Subsystems Acts as high-density volatile memory for embedded systems that target LPDDR3 architecture and a 1.2 V power domain.

Unique Advantages

• High Capacity — 64 Gbit Enables storage of large runtime data sets in a single-device solution.
• Defined Clock Rate — 933 MHz Supports designs requiring this specific operating frequency.
• Standard Mobile LPDDR3 Architecture Aligns with mobile LPDDR3 design parameters for integration into compatible systems.
• Compact Package — 253-VFBGA (12×12) Reduces board footprint for dense system layouts.
• 1.2 V Supply Operates within the specified low-voltage domain commonly used in mobile memory designs.
• Wide Operating Temperature Rated from -30°C to 85°C to accommodate varied environmental conditions.

Why Choose IC DRAM 64GBIT 933MHZ 253VFBGA?

The MT52L1G64D8QC-107 WT:B positions itself as a high-density Mobile LPDDR3 DRAM device combining 64 Gbit capacity, a 1G × 64 organization, and a 933 MHz clock in a compact 253-VFBGA (12×12) package. Its 1.2 V supply and specified -30°C to 85°C operating range make it suitable for mobile and space-constrained designs that require clearly defined electrical and thermal parameters.

This device is appropriate for engineers and procurement teams specifying LPDDR3 memory solutions where capacity, package size, and operating voltage are primary selection criteria. The factual specification set supports straightforward integration into designs that target the Mobile LPDDR3 SDRAM architecture.

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