MT52L512M64D4GN-107 WT:B
| Part Description |
IC DRAM 32GBIT 933MHZ 256FBGA |
|---|---|
| Quantity | 1,767 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 256-FBGA (14x14) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 256-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L512M64D4GN-107 WT:B – IC DRAM 32GBIT 933MHZ 256FBGA
The MT52L512M64D4GN-107 WT:B is a volatile DRAM device implementing the LPDDR3 mobile SDRAM architecture. It provides 32 Gbit density organized as 512M × 64 and operates at a clock frequency of 933 MHz.
This device is aimed at designs that require high-density, high-speed LPDDR3 memory in a compact package, with a 1.2 V supply and an operating temperature range from –30°C to 85°C.
Key Features
- Memory Core Implements SDRAM - Mobile LPDDR3 architecture with a density of 32 Gbit organized as 512M × 64.
- Performance Clock frequency rated at 933 MHz for LPDDR3-class operation.
- Power Low-voltage operation at 1.2 V supply.
- Package Available in a 256-ball WFBGA / 256-FBGA footprint (14 × 14 mm), supporting compact board integration.
- Operating Range Specified for operation from –30°C to 85°C (TC), enabling use across a broad thermal range.
- Memory Type & Format Volatile DRAM memory format suitable for LPDDR3 system architectures.
Typical Applications
- Mobile Devices LPDDR3 mobile SDRAM architecture and 32 Gbit density provide the capacity and speed required for mobile memory subsystems.
- Compact Module Designs The 256-ball FBGA (14×14 mm) package supports high-density memory implementations where PCB space is limited.
- Thermally Diverse Electronics The –30°C to 85°C operating range supports designs expected to operate across a wide temperature span.
Unique Advantages
- High-density memory: 32 Gbit capacity organized as 512M × 64 provides significant on-board DRAM capacity in a single device.
- LPDDR3 performance: 933 MHz clock frequency aligns with LPDDR3 mobile SDRAM requirements for responsive system memory.
- Low-voltage operation: 1.2 V supply reduces system power draw compared with higher-voltage alternatives.
- Compact packaging: 256-FBGA (14×14) / 256-WFBGA package enables dense system integration in space-constrained designs.
- Wide operating temperature: Rated for –30°C to 85°C, supporting deployment across varied thermal environments.
Why Choose MT52L512M64D4GN-107 WT:B?
The MT52L512M64D4GN-107 WT:B combines LPDDR3 mobile SDRAM architecture with a high 32 Gbit density and a 933 MHz clock rating, delivering a balance of capacity and speed for designs that require compact, low-voltage DRAM. Its 256-ball FBGA packaging and –30°C to 85°C operating range make it suitable for systems where board space and thermal variation are considerations.
This part is well suited for designers specifying LPDDR3-class memory devices who need verifiable electrical and mechanical characteristics—density, organization, clock frequency, supply voltage, package, and temperature range—to match system requirements and support long-term design planning.
Request a quote or submit an inquiry to sales to discuss availability, lead times, and pricing for the MT52L512M64D4GN-107 WT:B.
