MT52L512M64D4PQ-107 WT:B TR
| Part Description |
IC DRAM 32GBIT 933MHZ 253VFBGA |
|---|---|
| Quantity | 222 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 253-VFBGA (11x11.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 253-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L512M64D4PQ-107 WT:B TR – 32Gbit LPDDR3 DRAM, 933 MHz, 253-VFBGA
The MT52L512M64D4PQ-107 WT:B TR is a 32 Gbit volatile DRAM device implementing Mobile LPDDR3 SDRAM architecture. It is organized as 512M x 64 with a 933 MHz clock frequency and operates from a 1.2 V supply.
Packaged in a compact 253-VFBGA (11 x 11.5 mm) and specified for operation from -30°C to 85°C (TC), this part addresses high-density memory requirements for mobile and compact systems where speed and low-voltage operation are important.
Key Features
- Memory Type & Technology Mobile LPDDR3 SDRAM architecture; volatile DRAM format suited for system memory applications.
- Capacity & Organization 32 Gbit total capacity organized as 512M × 64 for high-density memory integration.
- Performance 933 MHz clock frequency to support high-throughput memory operations.
- Power 1.2 V supply voltage for low-voltage operation consistent with mobile memory designs.
- Package 253-VFBGA package (11 × 11.5 mm) enabling compact board-level integration.
- Temperature Range Rated for operation from -30°C to 85°C (TC) to accommodate a range of thermal environments.
Typical Applications
- Mobile devices — Mobile LPDDR3 architecture and 1.2 V operation make this device suitable for memory subsystems in portable/mobile electronics.
- High-density memory modules — 32 Gbit capacity (512M × 64) supports designs requiring large memory arrays in a single package.
- Thermally varied environments — Rated operation from -30°C to 85°C enables use in systems that must function across a broad temperature range.
Unique Advantages
- High-density integration: 32 Gbit capacity in a single 253-VFBGA package reduces board real estate for large-memory designs.
- Mobile-optimized architecture: LPDDR3 SDRAM technology aligns with low-voltage mobile memory requirements.
- Low-voltage operation: 1.2 V supply supports power-constrained systems and aligns with common mobile power rails.
- Compact BGA package: 253-VFBGA (11×11.5 mm) simplifies placement in space-constrained boards.
- Extended operating temperature: -30°C to 85°C (TC) supports deployment in a variety of thermal conditions.
- High clock rate: 933 MHz operation provides the performance headroom required for high-throughput memory tasks.
Why Choose MT52L512M64D4PQ-107 WT:B TR?
This Micron Technology Inc. 32 Gbit LPDDR3 DRAM balances high capacity, low-voltage operation, and a compact 253-VFBGA footprint to meet the needs of designs that require dense, mobile-optimized memory. Its 933 MHz clock frequency and 512M × 64 organization provide a clear specification set for system designers planning memory subsystems.
The device is appropriate for customers designing compact, high-density memory solutions that operate across a wide temperature range and require consistent LPDDR3 behavior from a recognized manufacturer.
For pricing, lead-time, or availability, request a quote or submit an inquiry to discuss MT52L512M64D4PQ-107 WT:B TR for your design requirements.
