MT52L512M64D4GN-107 WT:B TR
| Part Description |
IC DRAM 32GBIT 933MHZ 256FBGA |
|---|---|
| Quantity | 416 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 256-FBGA (14x14) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 256-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L512M64D4GN-107 WT:B TR – IC DRAM 32GBIT 933MHZ 256FBGA
The MT52L512M64D4GN-107 WT:B TR is a 32 Gbit volatile DRAM device based on Mobile LPDDR3 SDRAM technology. It provides a 512M × 64 memory organization and operates at a clock frequency of 933 MHz.
Targeted for applications that require high-density mobile LPDDR3 memory, the device offers a 1.2 V supply and is delivered in a 256-ball WFBGA package (256-FBGA, 14×14). Its specified operating temperature range is −30°C to 85°C.
Key Features
- Memory Type Volatile DRAM implemented using Mobile LPDDR3 SDRAM technology.
- Memory Organization & Capacity 512M × 64 organization yielding a total memory size of 32 Gbit.
- Performance Clock frequency specified at 933 MHz for synchronous DRAM operation.
- Power Single supply voltage of 1.2 V as specified for the device.
- Package 256-ball WFBGA package; supplier device package listed as 256-FBGA (14×14).
- Operating Temperature Rated for operation from −30°C to 85°C (TC).
Typical Applications
- Mobile Devices Memory subsystem for mobile-class designs leveraging Mobile LPDDR3 SDRAM at 933 MHz.
- Consumer Electronics High-density DRAM for consumer products requiring 32 Gbit memory capacity in a compact BGA footprint.
- Embedded Systems Onboard DRAM for embedded platforms that require a 1.2 V LPDDR3 memory solution within the specified temperature range.
Unique Advantages
- High-density 32 Gbit capacity: Supports applications needing large memory capacity in a single device footprint.
- 512M × 64 organization: Provides a common wide-data organization suitable for high-throughput memory designs.
- 933 MHz clock rate: Offers a defined synchronous operating frequency for timing and performance planning.
- Standard 1.2 V supply: Aligns with typical LPDDR3 power rails for system integration.
- Compact BGA package: 256-WFBGA / 256-FBGA (14×14) package helps reduce board area for space-constrained designs.
- Extended operating temperature: Rated from −30°C to 85°C to support a range of thermal environments.
Why Choose MT52L512M64D4GN-107 WT:B TR?
The MT52L512M64D4GN-107 WT:B TR from Micron Technology Inc. provides a high-density Mobile LPDDR3 DRAM option with a 512M × 64 organization and a 933 MHz clock rate. Its 1.2 V supply and compact 256-ball BGA package make it suitable for designs that require significant memory capacity in a small footprint while operating across an extended temperature range.
This device is appropriate for engineering teams and procurement focused on integrating LPDDR3 memory into mobile, consumer, or embedded platforms where defined frequency, voltage, and package specifications are key selection criteria.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT52L512M64D4GN-107 WT:B TR.
