MT52L512M64D4GN-107 WT ES:B TR
| Part Description |
IC DRAM 32GBIT 933MHZ 256FBGA |
|---|---|
| Quantity | 891 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 256-FBGA (14x14) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 256-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT52L512M64D4GN-107 WT ES:B TR – IC DRAM 32GBIT 933MHZ 256FBGA
The MT52L512M64D4GN-107 WT ES:B TR is a 32 Gbit volatile DRAM device based on SDRAM - Mobile LPDDR3 technology. It provides a 512M × 64 memory organization with 933 MHz clock operation and a 1.2V supply.
This device targets mobile LPDDR3 memory applications where compact packaging, high density and defined operating temperature range are required. Key characteristics include its 32 Gbit capacity, 933 MHz clock frequency and a 256-ball FBGA/WFBGA package.
Key Features
- Memory Type & Technology Volatile DRAM implemented as SDRAM - Mobile LPDDR3, suitable for LPDDR3 memory implementations.
- Density & Organization 32 Gbit total capacity with a 512M × 64 memory organization.
- Clock Frequency Rated for 933 MHz operation to meet specified LPDDR3 timing requirements.
- Supply Voltage Operates at a 1.2V supply voltage.
- Package & Mounting Available in a 256-ball package (PackageCase: 256-WFBGA); supplier device package listed as 256-FBGA (14×14).
- Operating Temperature Specified operating temperature range of -30°C to 85°C (TC).
Typical Applications
- Mobile Memory Subsystems Designed for mobile LPDDR3 memory implementations requiring 32 Gbit density and 933 MHz operation.
- Compact Embedded Systems Suited to space-constrained designs that need a high-density DRAM in a 256-ball FBGA/WFBGA package.
- LPDDR3 Module Designs Use in module-level designs where a 512M × 64 organization and 1.2V operation are required.
Unique Advantages
- High-density memory: 32 Gbit capacity enables higher memory footprint within a single DRAM device.
- Defined organization: 512M × 64 arrangement simplifies system memory mapping and integration.
- High-speed operation: 933 MHz clock rating supports LPDDR3 timing and bandwidth targets.
- Standard supply voltage: 1.2V operation aligns with LPDDR3 power rails.
- Compact package footprint: 256-ball FBGA/WFBGA packaging (supplier listed as 256-FBGA (14×14)) facilitates dense board layouts.
- Wide operating temperature: Specified for -30°C to 85°C to cover common commercial and industrial temperature ranges.
Why Choose MT52L512M64D4GN-107 WT ES:B TR?
The MT52L512M64D4GN-107 WT ES:B TR delivers a combination of high density, LPDDR3 technology and defined electrical/thermal specifications for designs that require 32 Gbit DRAM in a compact FBGA/WFBGA package. Its 512M × 64 organization, 933 MHz rating and 1.2V supply make it suitable for systems built around LPDDR3 memory architectures.
This device is appropriate for engineers specifying high-density LPDDR3 memory where package integration, predictable operating temperature range and standard 1.2V operation are key selection criteria.
Request a quote or submit an inquiry to discuss availability, pricing and lead times for the MT52L512M64D4GN-107 WT ES:B TR.
