MT52L1G64D8QC-107 WT:B TR
| Part Description |
IC DRAM 64GBIT 933MHZ 253VFBGA |
|---|---|
| Quantity | 583 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 253-VFBGA (12x12) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 253-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L1G64D8QC-107 WT:B TR – IC DRAM 64GBIT 933MHZ 253VFBGA
The MT52L1G64D8QC-107 WT:B TR is a 64 Gbit volatile DRAM device implemented as Mobile LPDDR3 SDRAM with a 1G × 64 memory organization. It provides 933 MHz operation at a 1.2 V supply and is supplied in a 253‑VFBGA (12×12) package.
This device targets systems that implement Mobile LPDDR3 architecture and require high-density, low-voltage DRAM in a compact BGA footprint. Key attributes include its 64 Gbit capacity, 933 MHz clock frequency, and an operating temperature range of −30 °C to 85 °C.
Key Features
- Memory Core 64 Gbit DRAM organized as 1G × 64, provided as volatile SDRAM memory.
- Technology Mobile LPDDR3 SDRAM architecture for systems using LPDDR3 memory technology.
- Performance 933 MHz clock frequency for devices requiring this specified operating rate.
- Power Operates from a 1.2 V supply, matching LPDDR3 low-voltage requirements.
- Package Supplied in a 253‑VFBGA (12×12) package, enabling compact board-level integration.
- Temperature Range Rated for operation from −30 °C to 85 °C (TC), accommodating a range of environmental conditions.
Typical Applications
- Mobile LPDDR3 systems Provides 64 Gbit LPDDR3 SDRAM capacity for devices and platforms that implement Mobile LPDDR3 memory architecture.
- High-density memory modules Used by designers integrating 1G × 64 DRAM components into module or system memory subsystems.
- Thermally constrained electronics Suitable for systems operating within the −30 °C to 85 °C temperature window requiring a compact BGA package.
Unique Advantages
- High-density capacity: 64 Gbit organization (1G × 64) supports designs needing large volatile memory in a single device.
- LPDDR3 architecture: Mobile LPDDR3 SDRAM technology aligns with systems designed around LPDDR3 standards.
- Defined performance: 933 MHz clock frequency provides a clear operating rate for performance planning and system timing.
- Low-voltage operation: 1.2 V supply requirement supports low-voltage system designs.
- Compact BGA package: 253‑VFBGA (12×12) footprint helps minimize PCB area for high-density memory implementations.
- Wide operating range: −30 °C to 85 °C rating enables use in a variety of temperature environments within that range.
Why Choose MT52L1G64D8QC-107 WT:B TR?
The MT52L1G64D8QC-107 WT:B TR positions itself as a high-density Mobile LPDDR3 DRAM option, combining 64 Gbit capacity with a 933 MHz operating frequency and 1.2 V power requirement. Its 253‑VFBGA (12×12) package and −30 °C to 85 °C operating range make it appropriate for compact systems that require substantial volatile memory within those thermal limits.
This device is suitable for designers and engineers building systems around LPDDR3 memory architecture who need explicit, verifiable specifications for capacity, clock rate, supply voltage, package, and operating temperature.
Request a quote or contact sales to discuss availability and pricing for MT52L1G64D8QC-107 WT:B TR.
