MT52L512M64D4PQ-093 WT:B TR

The MT52L512M64D4PQ-093 WT:B TR is a 32 Gbit volatile DRAM device built on Mobile LPDDR3 SDRAM technology. It delivers a 512M × 64 memory organization with a clock frequency of 1.067 GHz and operates from a 1.2 V supply.

This device targets designs requiring high-density, low-voltage volatile memory in a compact 253-VFBGA (11 × 11.5 mm) package and supports operation across a thermal range of −30°C to 85°C (TC).

Key Features

• Memory Technology 
  Mobile LPDDR3 SDRAM architecture providing volatile DRAM functionality suitable for high-density memory applications.
• Capacity & Organization 
  32 Gbit total capacity arranged as 512M × 64, enabling large memory footprints in a single package.
• Performance 
  1.067 GHz clock frequency for memory access timing consistent with the specified LPDDR3 operating point.
• Power 
  1.2 V supply voltage to support low-voltage system designs.
• Package 
  253-VFBGA package (11 × 11.5 mm) for compact board-level integration and high-density placement.
• Operating Temperature 
  Specified operating range from −30°C to 85°C (TC) for use in a variety of thermal environments.
• Manufacturer 
  Produced by Micron Technology Inc.

Typical Applications

• Mobile Devices 
  Memory capacity and LPDDR3 architecture suited for mobile and handheld device designs requiring compact, low-voltage DRAM.
• Embedded Systems 
  High-density volatile memory for embedded modules where board space and power budget are constrained.
• Consumer Electronics 
  Provides large memory capacity in a small package for consumer products that require fast, compact DRAM.

Unique Advantages

• High Density in a Single Die 
  32 Gbit capacity (512M × 64) reduces the number of memory components needed for high-capacity designs.
• LPDDR3 Low-Voltage Operation 
  1.2 V supply supports lower power consumption compared with higher-voltage DRAM alternatives.
• Compact VFBGA Footprint 
  253-VFBGA (11 × 11.5 mm) package enables tight board integration and space savings.
• Industry-Appropriate Clock Rate 
  1.067 GHz clock frequency aligns with LPDDR3 performance targets for bandwidth-sensitive applications.
• Extended Temperature Range 
  Rated for −30°C to 85°C (TC) to accommodate a range of operating environments.
• From a Recognized Manufacturer 
  Produced by Micron Technology Inc., offering traceability to a known memory supplier.

Why Choose IC DRAM 32GBIT 1067MHZ 253VFBGA?

The MT52L512M64D4PQ-093 WT:B TR combines 32 Gbit of LPDDR3 volatile memory, a 1.067 GHz clock rate, and a 1.2 V supply in a compact 253-VFBGA package. Its organization and thermal rating make it a clear option for designs that need substantial on-board memory density while maintaining a low-voltage profile.

This device is suited to engineers and procurement teams specifying high-capacity DRAM for space- and power-constrained systems, offering a balance of density, performance, and compact package form factor from Micron Technology Inc.

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