MT53B1024M32D4NQ-053 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 285 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B1024M32D4NQ-053 WT:C TR – Mobile LPDDR4 32Gbit DRAM, 1.866GHz, 200‑VFBGA
The MT53B1024M32D4NQ-053 WT:C TR is a 32 Gbit volatile DRAM device from Micron Technology Inc., built on Mobile LPDDR4 SDRAM architecture. It delivers a 1.866 GHz clock frequency and a 1G x 32 memory organization to support high-frequency DRAM operation for mobile and embedded applications.
Designed for space-constrained board layouts, the device is supplied in a 200‑VFBGA (10 × 14.5 mm) package and operates from a 1.1 V supply, offering a combination of density, speed, and a defined operating temperature range for system integration.
Key Features
- Memory Architecture Mobile LPDDR4 SDRAM technology with a memory organization of 1G × 32, providing 32 Gbit of volatile DRAM capacity.
- Frequency Rated clock frequency of 1.866 GHz for high-speed memory operation where supported by the system.
- Power Single 1.1 V supply voltage to match LPDDR4 power domains in mobile and embedded designs.
- Package 200‑VFBGA package (10 × 14.5 mm) suitable for compact, board-level implementations requiring BGA mounting.
- Thermal Range Operating temperature from −30 °C to 85 °C (TC) for deployment across a range of environmental conditions.
Typical Applications
- Mobile and Handheld Devices Memory density and LPDDR4 architecture support compact, high-speed DRAM needs in mobile and handheld systems.
- Embedded Systems Use in embedded platforms that require 32 Gbit volatile memory with up to 1.866 GHz operation for system memory or buffering.
- Space-Constrained PCB Designs The 200‑VFBGA (10 × 14.5 mm) package is well suited to designs where PCB area and component height are limited.
Unique Advantages
- High Density (32 Gbit): Enables large memory capacity within a single device for memory-intensive functions.
- High-Frequency Operation: 1.866 GHz clock rate supports applications requiring faster DRAM cycles when supported by the host controller.
- LPDDR4 Architecture: Mobile SDRAM technology aligned with low-voltage LPDDR4 system designs at 1.1 V.
- Compact BGA Package: 200‑VFBGA (10 × 14.5 mm) package reduces board footprint while providing BGA mounting reliability.
- Wide Operating Temperature: −30 °C to 85 °C operating range for deployment in varied thermal environments.
Why Choose MT53B1024M32D4NQ-053 WT:C TR?
This Micron LPDDR4 DRAM device combines 32 Gbit density with a 1.866 GHz clock rating and a 1.1 V supply to address designs that need compact, high-frequency volatile memory. Its 200‑VFBGA package and defined operating temperature range make it suitable for space-conscious embedded and mobile systems.
The MT53B1024M32D4NQ-053 WT:C TR is appropriate for engineers specifying LPDDR4 memory where capacity, frequency, and package footprint are primary selection criteria, offering a clear specification set for system integration and procurement.
Request a quote or submit an inquiry to check availability and pricing for the MT53B1024M32D4NQ-053 WT:C TR.
