MT53B1024M32D4NQ-062 WT ES:C
| Part Description |
IC DRAM 32GBIT 1.6GHZ 200VFBGA |
|---|---|
| Quantity | 413 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B1024M32D4NQ-062 WT ES:C – IC DRAM 32GBIT 1.6GHZ 200VFBGA
The MT53B1024M32D4NQ-062 WT ES:C is a 32 Gbit volatile DRAM device based on SDRAM - Mobile LPDDR4 architecture. It delivers high-density, high-frequency memory in a compact 200‑VFBGA package for space-constrained designs.
This device is suited for systems requiring high-bandwidth mobile LPDDR4 memory operation with a 1.6 GHz clock rate, low-voltage 1.1 V operation, and an industrial temperature range of -30°C to 85°C (TC).
Key Features
- Memory Core 32 Gbit SDRAM in a 1G × 32 organization, implemented as mobile LPDDR4 architecture for high-density memory integration.
- Performance Supports a clock frequency of 1.6 GHz to address high-bandwidth memory requirements in mobile and embedded designs.
- Power Low-voltage operation at 1.1 V to help reduce overall system power consumption where supported by the platform.
- Package Supplied in a 200‑VFBGA package (10×14.5), providing a compact footprint for space-limited PCBs.
- Operating Range Rated for operation from -30°C to 85°C (TC), supporting a broad range of temperature environments.
- Device Type Volatile DRAM memory format, intended for applications requiring temporary high-speed data storage.
Typical Applications
- Mobile Devices — Used as high-bandwidth, compact memory in mobile platforms that rely on LPDDR4 memory architecture and 1.6 GHz operation.
- Portable Electronics — Fits space-constrained consumer and handheld devices where 32 Gbit density and a 200‑VFBGA package are beneficial.
- Embedded Systems — Provides temporary data storage for embedded designs that require low-voltage operation and an extended operating temperature range.
Unique Advantages
- High density memory: 32 Gbit capacity in a 1G × 32 organization enables large in-system memory without multiple devices.
- High-frequency operation: 1.6 GHz clock frequency supports demanding bandwidth needs in LPDDR4-based designs.
- Low-voltage operation: 1.1 V supply reduces power draw where platform support exists, helping system-level power management.
- Compact BGA footprint: 200‑VFBGA (10×14.5) package minimizes PCB area for space-sensitive applications.
- Extended temperature support: Rated from -30°C to 85°C (TC) to accommodate a wide range of environmental conditions.
Why Choose IC DRAM 32GBIT 1.6GHZ 200VFBGA?
This MT53B1024M32D4NQ-062 WT ES:C device positions itself as a high-density, high-frequency LPDDR4 DRAM option for designers needing compact, low-voltage memory in constrained form factors. Its combination of 32 Gbit capacity, 1.6 GHz operation, 1.1 V supply, and 200‑VFBGA packaging addresses performance and integration needs for mobile and embedded applications.
Designers targeting systems that require scalable memory capacity, reduced board footprint, and operation across -30°C to 85°C will find this device suitable for implementations where temporary high-speed data storage is required.
Request a quote or submit a pricing inquiry to obtain availability, lead-time, and volume pricing information for the MT53B1024M32D4NQ-062 WT ES:C.
