MT53B512M64D4EZ-062 WT:B TR

The MT53B512M64D4EZ-062 WT:B TR is a 32 Gbit volatile DRAM device built on Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and operates at a clock frequency of 1.6 GHz with a 1.1 V supply.

This device targets mobile LPDDR4 memory applications and other designs that require high-density, low-voltage DRAM operating across an extended temperature range.

Key Features

• Core Technology

  SDRAM implemented using Mobile LPDDR4 technology for use in LPDDR4-class memory designs.

• Memory Organization & Capacity

  512M × 64 organization providing a total memory size of 32 Gbit for high-density memory requirements.

• Clock Performance

  Specified clock frequency of 1.6 GHz to meet timing requirements for supported system architectures.

• Low Voltage Operation

  1.1 V supply voltage suitable for low-power memory systems.

• Temperature Range

  Operating temperature range from −30 °C to 85 °C (TC) for deployment in systems with extended ambient conditions.

• Memory Type & Format

  Volatile DRAM memory format intended for system memory applications.

• Package

  FBGA package type as indicated in the product designation.

Typical Applications

• Mobile Devices — Integration as system memory in mobile platforms that utilize LPDDR4-class DRAM technology and low-voltage operation.
• Embedded Systems — High-density volatile storage for embedded designs requiring 32 Gbit memory capacity and 1.1 V supply compatibility.
• Consumer Electronics — Use in handheld or portable consumer products where compact FBGA packaging and extended temperature operation are needed.

Unique Advantages

• High Capacity: 32 Gbit memory size supports applications that need large volatile storage in a single device.
• Compact Organization: 512M × 64 organization simplifies memory mapping and integration into systems designed for wide data buses.
• LPDDR4 Technology: Mobile LPDDR4 SDRAM architecture provides a known technology choice for LPDDR4-class designs.
• Low-Voltage Operation: 1.1 V supply reduces power draw compared with higher-voltage memory options, supporting power-constrained designs.
• Extended Temperature Capability: −30 °C to 85 °C operating range supports deployment in environments with wider temperature swings.
• FBGA Packaging: Ball-grid array package supports compact board-level integration where space is constrained.

Why Choose MT53B512M64D4EZ-062 WT:B TR?

The MT53B512M64D4EZ-062 WT:B TR offers a high-density, low-voltage LPDDR4 DRAM solution suited to designs that require 32 Gbit of volatile memory in an FBGA package. With a 1.6 GHz clock frequency, 512M × 64 organization, and an operating range from −30 °C to 85 °C, it addresses system needs for capacity, compact integration, and extended temperature operation.

Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying LPDDR4-class DRAM for mobile devices, embedded systems, and compact consumer products that prioritize density and low-voltage operation.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT53B512M64D4EZ-062 WT:B TR.