MT53B512M64D4NH-062 WT:C
| Part Description |
IC DRAM 32GBIT 1.6GHZ 272WFBGA |
|---|---|
| Quantity | 694 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 272-WFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 272-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D4NH-062 WT:C – IC DRAM 32Gbit 1.6GHz 272-WFBGA
The MT53B512M64D4NH-062 WT:C is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It delivers a 512M x 64 memory organization with a 1.6 GHz clock frequency and operates at a 1.1 V supply.
Packaged in a compact 272‑WFBGA (15 × 15) and specified for operation from −30°C to 85°C (TC), this Micron Technology Inc. device is targeted at designs that require high-density LPDDR4 memory in a small footprint.
Key Features
- Memory Core 32 Gbit DRAM organized as 512M × 64, providing a high-density memory array for systems requiring significant storage capacity.
- Technology Mobile LPDDR4 SDRAM architecture supporting LPDDR4 design requirements.
- Performance 1.6 GHz clock frequency for timing consistent with LPDDR4 mobile memory operation.
- Power 1.1 V supply voltage to match low-voltage LPDDR4 system designs.
- Package 272‑WFBGA (15 × 15) supplier device package for compact board-level integration.
- Temperature Range Rated for −30°C to 85°C (TC) operating conditions.
- Memory Type & Format Volatile DRAM memory format suitable for dynamic system memory applications.
Typical Applications
- Mobile systems LPDDR4 memory integration for mobile devices and platforms that require compact, high-density DRAM.
- Embedded computing High-capacity memory for embedded designs where board space and power efficiency are constrained.
- Consumer electronics Compact WFBGA packaging and LPDDR4 operation for consumer devices requiring dense DRAM footprints.
Unique Advantages
- High-density 32 Gbit capacity: Enables large-memory designs while minimizing component count.
- LPDDR4 mobile SDRAM at 1.6 GHz: Delivers the clock frequency expected for LPDDR4 mobile memory implementations.
- Low-voltage 1.1 V operation: Supports lower power budgets typical of mobile and embedded applications.
- Compact 272‑WFBGA (15×15) package: Facilitates board-space savings and high-density system layouts.
- Wide operating temperature range: −30°C to 85°C rating supports deployment across varied thermal environments.
- 512M × 64 organization: Straightforward memory mapping for system designers implementing wide data buses.
Why Choose MT53B512M64D4NH-062 WT:C?
The MT53B512M64D4NH-062 WT:C combines LPDDR4 mobile SDRAM architecture with a 32 Gbit density, 1.6 GHz clocking, and a 1.1 V power profile, packaged in a compact 272‑WFBGA. These characteristics make it suitable for designs that require high-density, low-voltage DRAM in a small footprint and across a broad operating temperature window.
Manufactured by Micron Technology Inc., this device is intended for customers designing mobile and embedded systems that need scalable memory capacity with conventional LPDDR4 interfaces and form factors.
Request a quote or contact sales to discuss availability, pricing, and integration details for MT53B512M64D4NH-062 WT:C.
