MT53B1024M32D4NQ-062 WT:C

The MT53B1024M32D4NQ-062 WT:C is a volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It provides a 32 Gbit memory capacity organized as 1G x 32 and is specified for operation at a 1.6 GHz clock frequency.

This device is supplied in a 200-VFBGA (10x14.5) package with a 1.1 V supply voltage and an operating temperature range of -30°C to 85°C (TC), targeting compact, high-density memory implementations for mobile and embedded applications.

Key Features

• Memory Technology  Mobile LPDDR4 SDRAM architecture delivering volatile DRAM functionality for high-density memory subsystems.
• Capacity & Organization  32 Gbit total capacity organized as 1G x 32 to simplify system memory mapping and address space planning.
• Clock Frequency  Rated for operation at a 1.6 GHz clock frequency to support high-speed memory timing requirements.
• Supply Voltage  Operates from a 1.1 V supply voltage as specified.
• Package  200-VFBGA package (10x14.5) providing a ball-grid footprint for surface-mount assembly.
• Operating Temperature  Specified for -30°C to 85°C (TC) to accommodate a range of thermal environments.

Typical Applications

• Mobile devices  High-density LPDDR4 DRAM for memory subsystems in mobile and handheld product designs.
• Embedded systems  Compact package and 32 Gbit capacity for embedded applications requiring on-board volatile memory.
• Consumer electronics  Memory component for compact electronics where board space and integration are important.

Unique Advantages

• 32 Gbit single-device capacity: Delivers high memory density in a single package to reduce board-level part count.
• 1G x 32 organization: Provides a straightforward memory organization for system integration and addressing.
• 1.6 GHz clock support: Enables high-frequency DRAM operation where specified clocking is required.
• 1.1 V supply: Specified low-voltage operation for compatibility with systems designed around 1.1 V DRAM rails.
• Compact 200-VFBGA package: Ball-grid package with 10x14.5 footprint suited to space-constrained PCB layouts.
• Expanded temperature range: Rated for -30°C to 85°C (TC) to cover a wide set of thermal operating conditions.

Why Choose MT53B1024M32D4NQ-062 WT:C?

The MT53B1024M32D4NQ-062 WT:C positions itself as a high-density Mobile LPDDR4 DRAM option, combining 32 Gbit capacity with a 1.6 GHz clock rating in a compact 200-VFBGA package. Its 1G x 32 organization and 1.1 V supply make it suitable for designs that require a dense, surface-mount DRAM solution targeted at mobile and embedded memory subsystems.

Manufactured by Micron Technology Inc., this device is appropriate for engineering teams and procurement focused on integrating standard LPDDR4 memory components into space- and power-constrained designs while maintaining defined thermal and electrical specifications.

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