MT53B1024M32D4NQ-062 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.6GHZ 200VFBGA |
|---|---|
| Quantity | 1,586 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B1024M32D4NQ-062 WT:C TR – IC DRAM 32GBIT 1.6GHZ 200VFBGA
The MT53B1024M32D4NQ-062 WT:C TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 1G x 32 with a 1.6 GHz clock frequency and operates from a 1.1 V supply.
Its combination of high density, mobile LPDDR4 architecture and a compact 200‑VFBGA (10×14.5) package targets mobile and compact system designs that require dense, high-frequency volatile memory within a confined footprint. The device is specified for an operating temperature range of -30°C to 85°C (TC).
Key Features
- Memory Type & Format Volatile DRAM implemented as Mobile LPDDR4 SDRAM for high-density, high-frequency memory applications.
- Memory Capacity & Organization 32 Gbit total capacity organized as 1G × 32 to support 32‑bit data configurations.
- Clock Frequency 1.6 GHz clock frequency for high-speed memory operation.
- Power 1.1 V supply voltage suitable for low‑voltage system designs.
- Package 200‑VFBGA package (10×14.5 mm) for compact board-level integration.
- Operating Temperature Specified operating range of -30°C to 85°C (TC).
Typical Applications
- Mobile devices — LPDDR4 technology and 1.1 V operation make this device suitable for memory subsystems in mobile and handheld platforms.
- Portable electronics — High density in a compact 200‑VFBGA package supports space-constrained portable designs.
- Embedded computing — 1G × 32 organization and 1.6 GHz clocking provide capacity and bandwidth for embedded systems requiring volatile main memory.
Unique Advantages
- High memory density: 32 Gbit capacity reduces the number of discrete memory devices required for large memory footprints.
- High-frequency operation: 1.6 GHz clocking supports higher data-rate memory interfaces on compatible designs.
- Low-voltage design: 1.1 V supply enables integration into low-power system architectures.
- Compact package: 200‑VFBGA (10×14.5) footprint enables dense board layouts and efficient use of PCB area.
- 32‑bit organization: 1G × 32 configuration aligns with 32‑bit data path designs for straightforward memory mapping.
Why Choose IC DRAM 32GBIT 1.6GHZ 200VFBGA?
The IC DRAM 32GBIT 1.6GHZ 200VFBGA from Micron Technology Inc. delivers a combination of high capacity, mobile LPDDR4 architecture and compact packaging, making it suitable for designers who need dense, high-frequency volatile memory in space-constrained systems. Its 1.1 V supply and specified operating range support integration into low-voltage, thermally varied environments.
This device is positioned for mobile and embedded applications that require scalable memory capacity and a compact physical footprint. For design teams focused on integrating high-density LPDDR4 memory, the MT53B1024M32D4NQ-062 WT:C TR provides verifiable specifications for capacity, frequency, package and operating range.
Request a quote or submit an inquiry to discuss availability and pricing for the MT53B1024M32D4NQ-062 WT:C TR.
