MT53B512M64D4NJ-062 WT:B TR

IC DRAM 32GBIT 1.6GHZ 272WFBGA
Part Description

IC DRAM 32GBIT 1.6GHZ 272WFBGA

Quantity 940 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package272-WFBGA (15x15)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.6 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackaging272-WFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization512M x 64
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT53B512M64D4NJ-062 WT:B TR – 32 Gbit Mobile LPDDR4 DRAM, 1.6 GHz, 272‑WFBGA

The MT53B512M64D4NJ-062 WT:B TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and operates at a clock frequency of 1.6 GHz, targeting designs that require high-speed, low-voltage memory.

Packaged in a 272‑ball WFBGA (15 × 15 mm) and specified for operation from -30 °C to 85 °C, this device is suited for systems where compact package, low power supply voltage, and high data rate are primary considerations.

Key Features

  • Memory Technology  SDRAM implemented as Mobile LPDDR4, providing a low-power, high-speed DRAM architecture.
  • Density & Organization  32 Gbit capacity organized as 512M × 64, delivering wide data words for throughput-oriented designs.
  • Clock Frequency  Rated for 1.6 GHz operation, enabling high-rate data transfers consistent with modern LPDDR4 timing.
  • Supply Voltage  1.1 V nominal supply, optimized for low-voltage system designs and reduced power consumption.
  • Package  272‑WFBGA footprint (15 × 15 mm) for compact board-level integration with fine-pitch BGA assembly.
  • Operating Temperature  Specified for -30 °C to 85 °C (TC), supporting a broad range of commercial and industrial temperature environments.
  • Memory Format  Volatile DRAM, suitable for system memory use where non‑persistent storage is acceptable.

Typical Applications

  • Mobile and handheld devices  High-density LPDDR4 memory for compact designs that require high data rates and low-voltage operation.
  • Embedded systems  Wide 64-bit organization and 32 Gbit capacity for embedded controllers and multimedia subsystems needing substantial working memory.
  • High-performance computing modules  Used where 1.6 GHz clocking and LPDDR4 architecture support bandwidth-sensitive tasks in space-constrained packages.

Unique Advantages

  • High-density memory in a compact package: 32 Gbit capacity in a 15 × 15 mm 272‑WFBGA reduces PCB area for large-memory designs.
  • Low-voltage operation: 1.1 V supply supports reduced power consumption compared with higher-voltage memory options.
  • High clock capability: 1.6 GHz rating enables elevated data throughput for bandwidth-critical applications.
  • Wide data organization: 512M × 64 arrangement provides a 64-bit data path suited to performance-oriented memory interfaces.
  • Broad operating temperature: -30 °C to 85 °C qualification helps accommodate systems operating across varied thermal conditions.

Why Choose MT53B512M64D4NJ-062 WT:B TR?

This LPDDR4 DRAM device offers a balanced combination of high capacity, high clock frequency, and low-voltage operation in a compact 272‑WFBGA package. It is positioned for designs that require substantial volatile memory bandwidth while maintaining tight board space and power budgets.

The MT53B512M64D4NJ-062 WT:B TR is suited to engineers building mobile, embedded, or high-throughput modules who need a verifiable specification set—32 Gbit density, 1.6 GHz operation, 1.1 V supply, and a broad temperature range—to ensure design scalability and operational robustness.

Request a quote or submit an inquiry to discuss availability, pricing, and supply options for the MT53B512M64D4NJ-062 WT:B TR.

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