MT53B512M64D4NK-053 WT ES:C TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 366WFBGA |
|---|---|
| Quantity | 251 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D4NK-053 WT ES:C TR – IC DRAM 32GBIT 1.866GHZ 366WFBGA
The MT53B512M64D4NK-053 WT ES:C TR is a 32 Gbit mobile LPDDR4 SDRAM device designed for compact, high-density memory applications. It implements a 512M × 64 organization and operates at a clock frequency of 1.866 GHz.
This device targets mobile and embedded systems that require high-frequency SDRAM in a low-voltage, small-footprint package, offering 1.1 V operation and a 366‑WFBGA (15×15) package with an extended operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Core 32 Gbit capacity organized as 512M × 64, providing large on-package DRAM density for memory-intensive applications.
- Technology Mobile LPDDR4 SDRAM architecture designed for mobile-class memory use.
- Performance 1.866 GHz clock frequency enabling high-speed DRAM access consistent with LPDDR4 timing domains.
- Power 1.1 V nominal supply voltage to support low-voltage system designs.
- Package 366‑WFBGA (15×15) supplier device package for compact board integration.
- Operating Range Rated for −30°C to 85°C (TC), suitable for deployments that require operation across a broad temperature span.
Typical Applications
- Mobile devices — System memory in mobile-class designs using LPDDR4 where compact, high-density DRAM is required.
- Embedded systems — Memory for embedded platforms that need 32 Gbit density in a small BGA footprint and low-voltage operation.
- Handheld electronics — On-board DRAM for handheld products that demand high clock rates and an extended operating temperature range.
Unique Advantages
- High density in a compact package: 32 Gbit capacity in a 366‑WFBGA (15×15) package enables space-efficient board designs.
- High-frequency operation: 1.866 GHz clock frequency supports demanding memory throughput requirements within LPDDR4 architectures.
- Low-voltage support: 1.1 V supply voltage aligns with low-power system design goals and LPDDR4 power domains.
- Wide temperature capability: −30°C to 85°C (TC) rating allows deployment across a broad range of environmental conditions.
- Standard memory organization: 512M × 64 configuration simplifies capacity planning and integration into LPDDR4 memory subsystems.
Why Choose MT53B512M64D4NK-053 WT ES:C TR?
This LPDDR4 SDRAM device combines a high-capacity 32 Gbit memory core with a 1.866 GHz operating frequency and 1.1 V supply to address compact, high-performance memory requirements. The 366‑WFBGA (15×15) package and −30°C to 85°C operating range make it suitable for space-constrained designs that must operate reliably across varied temperatures.
Designers and procurement teams seeking a mobile LPDDR4 memory component with defined organization, frequency, voltage, package, and temperature specifications will find the MT53B512M64D4NK-053 WT ES:C TR appropriate for integration into mobile and embedded platforms where verified, high-density DRAM is required.
Request a quote or submit an inquiry to check availability, lead times and pricing for the MT53B512M64D4NK-053 WT ES:C TR.
