MT53B512M64D4NK-053 WT:C

The MT53B512M64D4NK-053 WT:C is a volatile SDRAM device based on Mobile LPDDR4 technology, offering 32 Gbit of DRAM capacity organized as 512M × 64. It operates at a clock frequency of 1.866 GHz and is supplied at 1.1 V.

Designed for compact, high-density memory implementations, this device is presented in a 366-ball WFBGA package (15 × 15 mm) and supports an operating temperature range of -30°C to 85°C (TC).

Key Features

• Memory Core and Architecture Mobile LPDDR4 SDRAM technology with a total capacity of 32 Gbit organized as 512M × 64.
• High-Speed Operation Rated clock frequency of 1.866 GHz to support high-bandwidth memory operations.
• Low-Voltage Supply Single-supply operation at 1.1 V to support low-power system designs.
• Package 366-ball WFBGA package with a 15 × 15 mm footprint for compact board-level integration.
• Temperature Range Specified operating temperature from -30°C to 85°C (TC) for a range of thermal environments.
• Memory Type Volatile DRAM format suitable for system memory applications requiring temporary data storage.

Typical Applications

• Mobile and Portable Devices Mobile LPDDR4 technology and a low 1.1 V supply make this device suitable for compact mobile memory subsystems.
• High-Density Memory Modules 32 Gbit capacity in a 15 × 15 mm WFBGA package enables high-density memory integration on space-constrained PCBs.
• Embedded Systems High clock frequency and dense organization support embedded designs that require substantial volatile memory bandwidth.

Unique Advantages

• High Capacity in a Small Footprint: 32 Gbit organized as 512M × 64 in a 15 × 15 mm 366-WFBGA package reduces board area for large-memory designs.
• High Bandwidth Operation: 1.866 GHz clocking supports higher data throughput where fast volatile memory is required.
• Low Supply Voltage: 1.1 V operation helps lower overall power consumption in battery‑sensitive applications.
• Wide Operating Temperature: Rated from -30°C to 85°C (TC) for use across varied thermal environments.
• Standard DRAM Format: Volatile SDRAM implementation suitable for system memory roles in LPDDR4-based designs.

Why Choose MT53B512M64D4NK-053 WT:C?

The MT53B512M64D4NK-053 WT:C balances high density, high-speed operation, and low-voltage operation in a compact 366-WFBGA package. Its Mobile LPDDR4 architecture and 1.866 GHz clock rate provide a clear specification for designs that require substantial volatile memory bandwidth in a small footprint.

This device is well suited to designers building mobile, portable, or embedded systems that need 32 Gbit of DRAM capacity at 1.1 V and an operating temperature range from -30°C to 85°C. The combination of capacity, speed, and package geometry supports integration choices where board space and power are key considerations.

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