MT53B512M64D4NK-062 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.6GHZ 366WFBGA |
|---|---|
| Quantity | 1,028 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4NK-062 WT:C TR – IC DRAM 32GBIT 1.6GHZ 366WFBGA
The MT53B512M64D4NK-062 WT:C TR from Micron Technology Inc. is a volatile DRAM device organized as 512M × 64 using Mobile LPDDR4 SDRAM technology. It provides 32 Gbit of memory capacity operating at a clock frequency of 1.6 GHz and a supply voltage of 1.1 V.
This device is intended for designs that require high-density LPDDR4 memory in a compact 366‑WFBGA (15 × 15 mm) package and supports operation across an ambient temperature range of −30°C to 85°C.
Key Features
- Memory Core 32 Gbit DRAM organized as 512M × 64 using Mobile LPDDR4 SDRAM technology.
- Performance Clock frequency of 1.6 GHz to support high-speed memory transactions.
- Power Low-voltage operation at a 1.1 V supply to meet LPDDR4 power rail requirements.
- Package 366‑WFBGA package in a 15 × 15 mm footprint for compact board-level integration.
- Operating Temperature Rated for −30°C to 85°C (TC) to cover a broad range of ambient conditions.
- Memory Format Volatile DRAM suitable for LPDDR4 memory subsystem implementations.
Typical Applications
- Mobile LPDDR4 systems — Integration into mobile device memory subsystems that use LPDDR4 architectures.
- High-density memory modules — Use where 32 Gbit density is required in a compact WFBGA package.
- Embedded systems — Designs requiring LPDDR4 volatile memory with 1.1 V operation and extended temperature range.
Unique Advantages
- High memory density: 32 Gbit capacity provides large addressable storage within a single device, simplifying system memory design.
- LPDDR4 technology: Mobile LPDDR4 SDRAM architecture enables compatibility with LPDDR4 memory subsystems and design conventions.
- High clock rate: 1.6 GHz clock frequency supports faster memory throughput where required by the system.
- Low-voltage operation: 1.1 V supply aligns with LPDDR4 power rails for reduced power budgets at the device level.
- Compact package: 366‑WFBGA (15 × 15 mm) provides a small board footprint for space-constrained designs.
- Extended temperature range: Rated −30°C to 85°C for operation across a wide set of environmental conditions.
Why Choose IC DRAM 32GBIT 1.6GHZ 366WFBGA?
The MT53B512M64D4NK-062 WT:C TR positions itself as a high-density LPDDR4 DRAM device that combines 32 Gbit capacity, 1.6 GHz clocking, and 1.1 V operation in a compact 366‑WFBGA package. These characteristics make it suitable for designs that require substantial volatile memory in a small footprint while operating across a broad temperature range.
Designed and manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying LPDDR4 memory for mobile, embedded, or other systems where memory density, power rail alignment, and package size are key selection criteria.
Request a quote or submit an inquiry to obtain pricing, lead time, and availability for the MT53B512M64D4NK-062 WT:C TR.
