MT53B512M64D4NZ-062 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.6GHZ FBGA |
|---|---|
| Quantity | 822 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4NZ-062 WT ES:D – IC DRAM 32GBIT 1.6GHZ FBGA
The MT53B512M64D4NZ-062 WT ES:D is a volatile SDRAM device implemented as Mobile LPDDR4 with a density of 32 Gbit. It provides a 512M × 64 memory organization operating at a clock frequency of 1.6 GHz and a supply voltage of 1.1 V.
This device targets applications that require high-density, high-speed DRAM in an FBGA package and supports operation across an industrial-style temperature range of −30°C to 85°C.
Key Features
- Memory Type and Architecture Mobile LPDDR4 SDRAM configured as 32 Gbit with a 512M × 64 organization for high-density system memory.
- Performance Clock frequency rated at 1.6 GHz to support high-speed memory access patterns.
- Power Operates from a 1.1 V supply, consistent with the device's LPDDR4 specification.
- Package Provided in an FBGA package form factor for compact board-level integration.
- Operating Temperature Specified for operation from −30°C to 85°C, enabling use across a broad thermal range.
Typical Applications
- Mobile devices — Memory subsystem for handheld and mobile platforms requiring LPDDR4 memory.
- Embedded systems — High-density DRAM for embedded designs where a 32 Gbit memory array is needed.
- Compact consumer electronics — Integration into space-constrained designs using an FBGA package.
Unique Advantages
- High memory density: 32 Gbit capacity supports large memory footprints without multiple devices.
- High-speed operation: 1.6 GHz clock frequency enables fast data throughput for demanding memory tasks.
- Standard LPDDR4 architecture: Mobile LPDDR4 form factor and organization (512M × 64) align with common mobile memory designs.
- Low nominal supply voltage: 1.1 V operation supports lower-voltage system designs.
- Wide operating temperature: −30°C to 85°C rating accommodates a range of deployment environments.
- FBGA packaging: Ball grid array package suited for compact board integration.
Why Choose MT53B512M64D4NZ-062 WT ES:D?
The MT53B512M64D4NZ-062 WT ES:D combines high density, high-frequency LPDDR4 architecture with a compact FBGA package, making it appropriate for designs that require significant memory capacity at 1.6 GHz and 1.1 V operation. Its specified operating temperature range supports deployment across diverse environmental conditions.
This device is suited for engineers designing mobile and embedded systems that need a 32 Gbit LPDDR4 solution with a 512M × 64 organization. Its characteristics make it a straightforward option for integrating high-density DRAM into space-constrained boards.
For pricing, lead time, or to request a quote for MT53B512M64D4NZ-062 WT ES:D, please request a formal quote or contact sales for further assistance.
