MT53B512M64D4PV-053 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 286 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D4PV-053 WT:C TR – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53B512M64D4PV-053 WT:C TR is a 32 Gbit mobile LPDDR4 DRAM device from Micron Technology Inc. It implements a 512M × 64 memory organization and operates as volatile SDRAM (DRAM) for system memory applications.
This device supports a 1.866 GHz clock frequency and 1.1 V supply, targeting designs that require high-density mobile LPDDR4 memory with low-voltage operation and a specified operating temperature range of −30°C to 85°C (TC).
Key Features
- Core / Memory Architecture
Mobile LPDDR4 SDRAM technology with a memory organization of 512M × 64 delivering 32 Gbit of volatile DRAM capacity. - Performance
Rated for operation at a 1.866 GHz clock frequency to meet timing requirements tied to that frequency. - Power
Low-voltage operation at 1.1 V to support power-sensitive system designs. - Temperature Range
Specified operating temperature from −30°C to 85°C (TC) for use in a range of thermal environments. - Memory Type / Format
Volatile memory implemented as DRAM for system and application memory functions. - Package
FBGA package indicated in the product designation (package details as stated in product name).
Typical Applications
- Mobile Devices — LPDDR4 technology and 1.1 V operation make this device suitable for mobile and handheld systems that use LPDDR4 memory.
- Smartphones and Tablets — 32 Gbit density and 512M × 64 organization provide large memory capacity for mobile computing form factors.
- Embedded and Consumer Electronics — Volatile DRAM capacity and 1.866 GHz clocking support embedded platforms that require LPDDR4 memory at that frequency.
Unique Advantages
- Large memory density: 32 Gbit capacity enables higher memory footprints within a single DRAM device.
- Mobile LPDDR4 architecture: Designed for LPDDR4 implementations common in mobile and handheld designs.
- Specified 1.866 GHz operation: Clear frequency rating supports designs targeting that clock rate.
- Low-voltage operation: 1.1 V supply helps reduce power draw in energy-conscious systems.
- Wide operating temperature: −30°C to 85°C (TC) allows deployment across varied thermal conditions.
- 512M × 64 organization: Enables straightforward integration into memory subsystems expecting that organization.
Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?
The MT53B512M64D4PV-053 WT:C TR provides a combination of 32 Gbit density, mobile LPDDR4 architecture, and a defined 1.866 GHz operating frequency, delivered at a low 1.1 V supply and rated for −30°C to 85°C operation. These attributes make it a focused choice for designs that require LPDDR4 memory capacity and operation at the specified clock and voltage conditions.
Produced by Micron Technology Inc., this DRAM device is intended for engineers and procurement teams specifying mobile LPDDR4 memory where the stated organization, frequency, voltage, and temperature range align with system requirements.
Request a quote or submit a sales inquiry to obtain pricing and availability information for the MT53B512M64D4PV-053 WT:C TR.
