MT53B512M64D4TX-053 WT:C

The MT53B512M64D4TX-053 WT:C is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It delivers a 512M × 64 memory organization with a 1.866 GHz clock frequency and operates from a 1.1 V supply.

This device is intended for systems that require high-density mobile LPDDR4 memory with defined operating temperature capability, providing a balance of capacity, frequency, and low-voltage operation.

Key Features

• Memory Architecture  Mobile LPDDR4 SDRAM architecture designed for volatile memory applications.
• Density & Organization  32 Gbit total capacity organized as 512M × 64 bits to support wide data paths and substantial on-board memory.
• Operating Frequency  1.866 GHz clock frequency for high-rate memory transactions within the device’s specified frequency.
• Voltage Supply  Low-voltage operation at 1.1 V to support power-sensitive designs.
• Temperature Range  Rated for operation from −30 °C to 85 °C (TC), enabling use across a range of environmental conditions.
• Package  Supplied in FBGA form factor as indicated by the product designation.

Typical Applications

• Mobile Devices  Used in mobile LPDDR4 memory subsystems where high-density, low-voltage DRAM is required.
• Handheld Electronics  Suitable for handheld platforms that need compact, high-capacity volatile memory at mobile DRAM speeds.
• Embedded Systems  Applicable for embedded designs that integrate LPDDR4 memory for temporary data storage and processing buffers.

Unique Advantages

• High Capacity: 32 Gbit density supports greater memory footprint for data buffering and application memory.
• Wide Data Organization: 512M × 64 organization provides a broad data bus for efficient data transfer.
• High Clock Rate: 1.866 GHz operating frequency enables higher transaction rates within LPDDR4 constraints.
• Low Supply Voltage: 1.1 V operation reduces overall power draw in low-power system designs.
• Extended Temperature Range: −30 °C to 85 °C rating accommodates deployments in varied thermal environments.
• Mobile LPDDR4 Technology: Designed specifically for LPDDR4-based memory solutions in portable and embedded applications.

Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?

The MT53B512M64D4TX-053 WT:C positions itself as a high-density LPDDR4 memory component that combines 32 Gbit capacity, a 512M × 64 organization, and a 1.866 GHz clock frequency with low-voltage 1.1 V operation. These characteristics make it suitable for designs that require substantial volatile memory bandwidth and reduced power consumption.

Backed by Micron Technology Inc., this device is appropriate for engineers specifying LPDDR4 mobile DRAM in compact FBGA implementations and for projects that demand predictable temperature performance and defined electrical parameters.

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