MT53D1024M32D4BD-053 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 880 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4BD-053 WT ES:D – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53D1024M32D4BD-053 WT ES:D from Micron Technology Inc. is a 32 Gbit volatile memory device implemented as mobile LPDDR4 SDRAM. It provides a 1G x 32 memory organization and operates at a clock frequency of 1.866 GHz.
Designed for systems that require LPDDR4-class DRAM, the device combines high density with 1.1 V supply operation and an extended operating temperature range of -30°C to 85°C, suitable for a range of mobile and embedded implementations.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM technology providing volatile DRAM storage.
- Capacity and Organization 32 Gbit total capacity arranged as 1G × 32 for straightforward bus organization.
- Performance Operates at a clock frequency of 1.866 GHz to support high-rate memory transactions.
- Power Nominal voltage supply of 1.1 V to support low-voltage system designs.
- Package Supplied in an FBGA package as indicated in the product designation.
- Operating Temperature Rated for -30°C to 85°C (TC), accommodating a wide range of thermal environments.
Typical Applications
- Mobile Devices Memory capacity and LPDDR4 technology suited to mobile platforms requiring 1.866 GHz operation and 1.1 V supply.
- Embedded Systems High-density DRAM for embedded designs that need a compact FBGA memory solution and extended temperature range.
- Consumer Electronics Use in consumer products that integrate LPDDR4 memory where the specified clock rate and voltage align with system requirements.
Unique Advantages
- High density — 32 Gbit: Provides substantial memory capacity within a single DRAM device to simplify board-level memory architecture.
- LPDDR4 mobile technology: Matches mobile-class DRAM specifications for designs requiring LPDDR4 compatibility as stated in the product data.
- 1.866 GHz operation: Supports higher-frequency memory operation as specified for performance-focused designs.
- Low-voltage 1.1 V operation: Supports lower power supply rails to assist in power-sensitive system designs.
- FBGA packaging: Supplied in an FBGA form factor to support compact board layouts.
- Extended temperature range: Rated from -30°C to 85°C for use in environments requiring broader thermal tolerance.
Why Choose MT53D1024M32D4BD-053 WT ES:D?
This Micron LPDDR4 SDRAM device positions itself as a high-density, mobile-class DRAM option combining 32 Gbit capacity with 1.866 GHz clocking and 1.1 V operation. Its FBGA packaging and extended -30°C to 85°C operating range make it suitable for compact, thermally variable systems that specify LPDDR4 memory.
Engineers and procurement teams selecting this part will find a clear specification set—capacity, organization, operating frequency, supply voltage, and temperature rating—allowing straightforward integration into designs that require the stated LPDDR4 characteristics.
To request a quote or discuss availability and pricing for MT53D1024M32D4BD-053 WT ES:D, please contact sales to submit a quote request or obtain more information.
