MT53D1024M32D4BD-053 WT:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 723 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4BD-053 WT:D – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53D1024M32D4BD-053 WT:D is a 32 Gbit volatile DRAM device based on SDRAM - Mobile LPDDR4 technology. It provides a 1G x 32 memory organization and operates at a clock frequency of 1.866 GHz with a 1.1 V supply voltage.
Designed for applications that require high-speed, low-voltage DRAM capacity, this device delivers a combination of density and operating characteristics suitable for memory subsystems and embedded designs operating within the specified temperature range.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture providing standard LPDDR4 volatile memory behavior.
- Capacity & Organization 32 Gbit total capacity organized as 1G × 32, enabling wide data paths for high-throughput memory operations.
- Performance Rated clock frequency of 1.866 GHz for high-speed data transactions.
- Power 1.1 V supply voltage optimized for low-voltage mobile LPDDR4 operation.
- Temperature Range Specified operating temperature from −30°C to 85°C (TC) for use in a broad set of thermal environments.
- Form Factor Device identified as FBGA package type in the product description.
Typical Applications
- Memory modules and subsystems Provides 32 Gbit LPDDR4 density and a 1G × 32 organization for use in memory subsystem designs.
- Embedded computing High-speed 1.866 GHz operation and 1.1 V supply make the device suitable for embedded designs that require mobile LPDDR4 DRAM.
- High-density DRAM requirements The 32 Gbit capacity addresses applications needing large volatile memory footprints in a compact component.
Unique Advantages
- High density: 32 Gbit total capacity supports designs that require significant volatile memory space.
- Wide data organization: 1G × 32 configuration provides a broad data interface for efficient throughput.
- High-speed operation: 1.866 GHz clock frequency enables fast DRAM access and data transfers.
- Low-voltage operation: 1.1 V supply reduces power draw compared with higher-voltage alternatives.
- Extended operating range: −30°C to 85°C (TC) operational temperature accommodates a range of thermal environments.
- Standard LPDDR4 technology: Based on Mobile LPDDR4 SDRAM for predictable integration in LPDDR4-based memory architectures.
Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?
The MT53D1024M32D4BD-053 WT:D positions itself as a high-density, high-speed mobile LPDDR4 DRAM device offering a 32 Gbit capacity, 1G × 32 organization, and 1.866 GHz clock frequency at a 1.1 V supply. Its specified operating temperature range supports deployment in environments requiring robust thermal tolerance.
Manufactured by Micron Technology Inc., this device is suitable for designs and engineers seeking scalable, low-voltage LPDDR4 memory capacity for memory subsystems and embedded computing applications where dense, fast volatile memory is required.
Request a quote or submit a pricing inquiry to receive availability and lead-time information for the MT53D1024M32D4BD-053 WT:D.
