MT53D1024M32D4DT-046 AAT ES:D TR
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 510 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-046 AAT ES:D TR – IC DRAM 32GBIT 2.133GHZ 200VFBGA
The MT53D1024M32D4DT-046 AAT ES:D TR is a volatile Mobile LPDDR4 SDRAM device providing 32 Gbit of memory in a 1G × 32 organization. It delivers high-frequency operation at 2.133 GHz and is specified for a 1.1 V supply, packaged in a 200‑VFBGA (10×14.5) footprint.
Targeted at systems that require automotive-grade memory, this device carries AEC-Q100 qualification and an extended operating temperature range of −40 °C to 105 °C (TC), combining compact packaging with high-speed DRAM performance.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM organized as 1G × 32, providing a total memory size of 32 Gbit.
- Performance Clock frequency specified at 2.133 GHz for high-speed volatile memory access.
- Power 1.1 V supply voltage defined for device operation.
- Package 200‑VFBGA package in a 10×14.5 mm footprint for compact board integration.
- Temperature & Qualification Operating temperature range −40 °C to 105 °C (TC) with AEC‑Q100 qualification.
- Memory Format DRAM (volatile) suitable where temporary high-speed storage is required.
Unique Advantages
- Automotive-qualified: AEC‑Q100 qualification and an automotive grade designation support use in automotive applications.
- High-frequency operation: 2.133 GHz clocking enables high-throughput memory transactions within the LPDDR4 class.
- High-density memory: 32 Gbit capacity in a 1G × 32 organization provides substantial on-board volatile storage.
- Compact BGA footprint: 200‑VFBGA (10×14.5) minimizes PCB area for space-constrained designs.
- Low-voltage supply: 1.1 V operation helps align power delivery with modern low-voltage system rails.
- Wide thermal range: −40 °C to 105 °C (TC) supports extended environmental operation.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
This Micron Technology Inc. LPDDR4 device balances high-speed operation, dense 32 Gbit capacity, and a compact BGA package while meeting automotive qualification standards. Its specified 2.133 GHz clock rate, 1.1 V supply, and extended temperature rating make it suitable for designs that require reliable, high-frequency volatile memory in constrained footprints.
The device is well suited to engineers and procurement teams specifying automotive-grade LPDDR4 DRAM who need clear, verifiable electrical and thermal parameters backed by a recognized manufacturer.
Request a quote or submit a pricing inquiry for MT53D1024M32D4DT-046 AAT ES:D TR to evaluate suitability and availability for your design requirements.
