MT53D1024M32D4BD-053 WT:D TR

IC DRAM 32GBIT 1.866GHZ FBGA
Part Description

IC DRAM 32GBIT 1.866GHZ FBGA

Quantity 214 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.866 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT53D1024M32D4BD-053 WT:D TR – IC DRAM 32GBIT 1.866GHZ FBGA

The MT53D1024M32D4BD-053 WT:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 1G × 32 and operates at a clock frequency of 1.866 GHz, targeting designs that require high-density mobile-class memory.

With 1.1 V supply operation and an operating temperature range of −30°C to 85°C, this Micron Technology Inc. memory component suits applications where low-voltage LPDDR4 memory and defined commercial temperature performance are required.

Key Features

  • Memory Technology Mobile LPDDR4 SDRAM (volatile DRAM) offering LPDDR4 architecture for mobile-class memory implementations.
  • Capacity & Organization 32 Gbit capacity organized as 1G × 32, providing a high-density footprint for memory subsystems.
  • Clock Frequency Operates at 1.866 GHz clock frequency to support higher data-rate operation within its specified technology class.
  • Supply Voltage 1.1 V nominal voltage supply compatible with low-voltage mobile memory system designs.
  • Temperature Range Specified operating temperature from −30°C to 85°C (TC), suitable for defined commercial and industrial ambient conditions.
  • Package & Format Listed as FBGA in the product name and provided in a DRAM memory format suitable for board-level integration.

Typical Applications

  • Mobile devices — LPDDR4 memory for mobile-class designs where low-voltage, high-density memory is required.
  • Embedded systems — High-density DRAM for embedded platforms that leverage LPDDR4 architecture and 1.1 V operation.
  • Memory subsystems — Integration into memory modules or subsystems requiring 32 Gbit devices organized as 1G × 32.

Unique Advantages

  • High memory density: 32 Gbit capacity supports space-constrained designs that require substantial DRAM storage.
  • Mobile LPDDR4 architecture: Built on LPDDR4 SDRAM technology, aligning with mobile-class memory design requirements.
  • High clock rate: 1.866 GHz operation enables higher data-rate performance within the specified technology.
  • Low-voltage operation: 1.1 V supply reduces power budget for systems designed around low-voltage DRAM.
  • Wide operating temperature: −30°C to 85°C specification provides defined thermal range for many commercial and industrial deployments.

Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?

The MT53D1024M32D4BD-053 WT:D TR delivers a combination of high capacity, LPDDR4 architecture, and low-voltage 1.1 V operation from Micron Technology Inc. It is positioned for designs that require a mobile-class DRAM device with a 1G × 32 organization and a 1.866 GHz clock frequency.

This device is suited to engineers and procurement teams specifying high-density LPDDR4 memory for mobile and embedded platforms, or for use in memory subsystems where capacity, defined operating temperature, and low-voltage operation are key selection criteria.

Request a quote or submit an inquiry to obtain pricing and availability for the MT53D1024M32D4BD-053 WT:D TR.

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