MT53B512M64D8HR-053 WT ES:B TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 681 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D8HR-053 WT ES:B TR – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53B512M64D8HR-053 WT ES:B TR is a 32 Gbit DRAM device based on Mobile LPDDR4 SDRAM technology. It implements a 512M × 64 memory organization and is presented in an FBGA package as indicated in the product name.
This device is specified for operation at a clock frequency of 1.866 GHz with a 1.1V supply and an operating temperature range of -30°C to 85°C (TC), making it suitable where those electrical and environmental parameters are required.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM technology with a memory organization of 512M × 64, providing a 32 Gbit capacity.
- Clock / Performance Rated clock frequency: 1.866 GHz.
- Power Voltage supply: 1.1V.
- Package FBGA package indicated in the product name.
- Memory Type Volatile DRAM format.
- Operating Temperature Specified range: -30°C to 85°C (TC).
Unique Advantages
- High memory density: 32 Gbit capacity with a 512M × 64 organization for designs that require large onboard DRAM.
- Specified high-speed operation: Rated for 1.866 GHz clock frequency to meet defined high-rate timing requirements.
- Low-voltage operation: Operates at a 1.1V supply to align with low-voltage system designs.
- Temperature tolerance: Operating range of -30°C to 85°C (TC) for deployments requiring that thermal window.
- Mobile LPDDR4 technology: Implements Mobile LPDDR4 SDRAM architecture as specified in the product data.
Why Choose MT53B512M64D8HR-053 WT ES:B TR?
This device is positioned as a high-density Mobile LPDDR4 DRAM component specified for 1.866 GHz operation at a 1.1V supply and an operating temperature range of -30°C to 85°C (TC). Its 512M × 64 organization and 32 Gbit capacity make it suitable for designs that require those explicit electrical and environmental specifications.
Choose this part when a documented Mobile LPDDR4 memory solution with the stated clock frequency, voltage supply, and temperature range is required; it provides a clear, specification-driven option for integration into systems matching these parameters.
Request a quote or submit an inquiry to sales for pricing, lead time, and availability information.
