MT53D1024M32D4BD-053 WT ES:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 555 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4BD-053 WT ES:D TR – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53D1024M32D4BD-053 WT ES:D TR is a 32 Gbit volatile DRAM device implemented in SDRAM - Mobile LPDDR4 technology. It is organized as 1G × 32 and rated for operation at a clock frequency of 1.866 GHz.
Key electrical and environmental attributes provided include a 1.1 V supply voltage and an operating temperature range of -30°C to 85°C, making the device suitable for designs that require high-density mobile LPDDR4 memory in a BGA package form factor.
Key Features
- Memory Core 32 Gbit capacity organized as 1G × 32, implemented as SDRAM in Mobile LPDDR4 technology.
- Performance Rated clock frequency of 1.866 GHz for high-speed DRAM operation.
- Power Single supply voltage of 1.1 V as specified in the product data.
- Temperature Range Operating temperature from -30°C to 85°C (TC) for extended environmental coverage.
- Package FBGA package style indicated in the product description.
- Memory Format & Volatility DRAM format; volatile memory intended for temporary storage in active systems.
Typical Applications
- Mobile Devices Mobile LPDDR4 architecture and 1.1 V supply make this device suitable for integration into mobile memory subsystems requiring 32 Gbit density and 1.866 GHz operation.
- Embedded Systems High-density DRAM capacity and the -30°C to 85°C operating range support embedded designs operating across varied environments.
- High-Bandwidth Memory Modules 1G × 32 organization combined with 1.866 GHz clocking supports designs that require substantial bandwidth and wide data paths.
Unique Advantages
- High Density (32 Gbit): Provides significant memory capacity per device to consolidate system memory requirements.
- LPDDR4 Technology: Specified as Mobile LPDDR4 SDRAM, aligning with LPDDR4 memory architectures used in mobile-focused designs.
- High Clock Frequency: 1.866 GHz rating enables higher-speed DRAM transactions where supported by system design.
- Low-Voltage Operation: 1.1 V supply voltage aligns with low-voltage system requirements common in mobile applications.
- Extended Temperature Range: -30°C to 85°C operating range supports deployment in environments with wider temperature variation.
Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?
The MT53D1024M32D4BD-053 WT ES:D TR positions itself as a high-density LPDDR4 DRAM device combining a 32 Gbit capacity, 1G × 32 organization, and a 1.866 GHz clock rating. Its 1.1 V supply and extended operating temperature range provide clear, verifiable attributes for designers targeting mobile and embedded memory solutions.
This device is suited to engineers and procurement teams specifying mobile LPDDR4 memory where high capacity, defined electrical characteristics, and environmental operating range are required. The product's specification set supports straightforward evaluation for systems that accept the listed electrical and thermal parameters.
Request a quote or contact sales to discuss pricing, lead times, and availability for MT53D1024M32D4BD-053 WT ES:D TR.
