MT53B512M64D4TX-053 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 150 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D4TX-053 WT:C TR – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53B512M64D4TX-053 WT:C TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It delivers high-speed memory operation at a clock frequency of 1.866 GHz and is supplied at 1.1 V.
This device is targeted at applications requiring high-density, high-bandwidth mobile-class memory and is specified for operation across a commercial temperature range of -30°C to 85°C.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture providing volatile dynamic memory behavior suitable for high-bandwidth applications.
- Density & Organization 32 Gbit capacity organized as 512M × 64 for substantial on-module memory capacity.
- Performance Clock frequency rated at 1.866 GHz to support high-speed data transfer requirements.
- Power Low-voltage operation with a 1.1 V supply to reduce power consumption in battery-powered or thermally constrained systems.
- Package Supplied in an FBGA package form factor as indicated in the product descriptor.
- Operating Temperature Specified for operation from -30°C to 85°C (TC), supporting a broad commercial temperature range.
Typical Applications
- Mobile Devices Used as high-density, high-speed memory in mobile and portable device memory subsystems where LPDDR4 performance is required.
- Embedded Computing Provides volatile system memory for embedded platforms that require substantial memory capacity and bandwidth.
- Handheld Electronics Suitable for handheld products that benefit from low-voltage, high-frequency DRAM to optimize power and performance.
Unique Advantages
- High-density storage: 32 Gbit capacity enables larger memory footprints within a single DRAM device, reducing the need for multiple components.
- High data-rate operation: 1.866 GHz clock frequency supports demanding bandwidth requirements for LPDDR4-based designs.
- Low-voltage operation: 1.1 V supply lowers power consumption compared with higher-voltage memories, benefiting battery-powered applications.
- Commercial temperature range: Rated for -30°C to 85°C, supporting reliable operation across a wide range of ambient conditions.
- Standard LPDDR4 architecture: Mobile LPDDR4 technology provides a known interface and behavior for systems designed around that standard.
Why Choose MT53B512M64D4TX-053 WT:C TR?
The MT53B512M64D4TX-053 WT:C TR positions itself as a high-density, high-frequency LPDDR4 DRAM option for designs that require 32 Gbit volatile memory at a 1.866 GHz clock rate and 1.1 V operation. Its specified commercial temperature range and FBGA package form factor make it suitable for compact, performance-focused mobile and embedded applications.
Manufactured by Micron Technology Inc., this device supports designs that need substantial on-die capacity and LPDDR4 performance characteristics while operating within the stated voltage and temperature parameters.
Request a quote or contact sales to discuss availability, pricing, and suitability of the MT53B512M64D4TX-053 WT:C TR for your design requirements.
