MT53B512M64D4PV-062 WT ES:C TR
| Part Description |
IC DRAM 32GBIT 1.6GHZ FBGA |
|---|---|
| Quantity | 799 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4PV-062 WT ES:C TR – IC DRAM 32GBIT 1.6GHZ FBGA
The MT53B512M64D4PV-062 WT ES:C TR is a 32 Gbit mobile LPDDR4 SDRAM device organized as 512M × 64. It implements DRAM architecture with an advertised clock frequency of 1.6 GHz and a 1.1 V supply.
Designed for mobile and embedded memory applications, this device provides high-density memory capacity and a specified operating temperature range for use in a variety of system environments.
Key Features
- Memory Architecture LPDDR4 mobile SDRAM format delivering 32 Gbit of volatile DRAM organized as 512M × 64 for high-density memory arrays.
- Performance Clock frequency rated at 1.6 GHz to meet high-throughput system requirements.
- Power Operates from a 1.1 V supply as specified for the device.
- Temperature Range Specified operating temperature range of −30°C to 85°C (TC) for deployment across varied thermal conditions.
- Package and Format Device identified in FBGA format and implemented as DRAM memory.
Typical Applications
- Mobile devices — Provides high-density LPDDR4 memory capacity suitable for mobile device memory subsystems.
- Embedded systems — Supports embedded platforms requiring 32 Gbit volatile memory in a compact DRAM form.
- Handheld electronics — Offers high clock-rate memory operation for handheld applications that require sustained data throughput.
Unique Advantages
- High memory density: 32 Gbit capacity in a 512M × 64 organization reduces the number of discrete devices needed for large memory footprints.
- High clock-rate operation: 1.6 GHz clock frequency supports high-throughput memory demands.
- LPDDR4 architecture: Mobile LPDDR4 technology provides a standardized DRAM approach for mobile and embedded implementations.
- Low-voltage supply: 1.1 V operation aligns with low-voltage system power domains.
- Extended operating range: −30°C to 85°C (TC) specification allows use across a broad set of thermal environments.
Why Choose IC DRAM 32GBIT 1.6GHZ FBGA?
This MT53B512M64D4PV-062 WT ES:C TR device positions itself as a high-density LPDDR4 DRAM option for designs that require 32 Gbit of volatile memory, 1.6 GHz clocking, and 1.1 V operation. Its specified operating temperature range supports deployment in diverse environments where those electrical and thermal characteristics are required.
The device is suited to design teams targeting mobile and embedded platforms that need compact, high-capacity DRAM in an FBGA form factor, offering clear design parameters for power, frequency, organization, and temperature.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53B512M64D4PV-062 WT ES:C TR.
