MT53B512M64D4NW-062 WT:D

The MT53B512M64D4NW-062 WT:D is a volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture with a density of 32 Gbit. It is organized as 512M × 64 and operates at a clock frequency of 1.6 GHz with a 1.1 V supply, targeting designs that require high-density, high-rate volatile memory.

Specified to operate across a temperature range of -30°C to 85°C (TC), this part is suited for systems needing a compact, high-capacity memory component within the stated environmental limits.

Key Features

• Memory Type Volatile DRAM implemented as Mobile LPDDR4 SDRAM for high-density, transient data storage.
• Density & Organization 32 Gbit total capacity, organized as 512M × 64 to support wide data paths and substantial addressable memory.
• Clock Performance Rated for operation at 1.6 GHz clock frequency to support high data-rate memory access patterns.
• Supply Voltage 1.1 V nominal supply voltage to match LPDDR4 low-voltage system designs.
• Operating Temperature Specified operating range of -30°C to 85°C (TC) for deployment within the stated thermal envelope.

Typical Applications

• Mobile Devices Mobile LPDDR4 architecture and 1.1 V operation align with memory subsystems in handheld and portable devices requiring high-density volatile storage.
• High-Bandwidth Embedded Systems 1.6 GHz clocking and 32 Gbit capacity support embedded designs that require fast, temporary data buffering and access.
• Consumer Electronics Use where compact, high-capacity volatile memory is needed within the specified temperature and voltage constraints.

Unique Advantages

• High Density (32 Gbit): Provides substantial memory capacity in a single DRAM device, reducing the number of components needed for large volatile memory pools.
• Wide Organization (512M × 64): The 64-bit data organization supports wide data transfers, simplifying memory bus design for parallel data paths.
• High Clock Rate (1.6 GHz): Supports high data-rate operation for systems that require faster memory access within the specified clock rating.
• Low-Voltage Operation (1.1 V): Compatible with LPDDR4 low-voltage system rails, aiding power-conscious designs.
• Extended Temperature Range: Rated for -30°C to 85°C operation, enabling deployment across a broad set of thermal environments within the stated limits.
• Manufacturer: Supplied by Micron Technology Inc., providing traceability to a known memory manufacturer.

Why Choose IC DRAM 32GBIT 1.6GHZ?

The MT53B512M64D4NW-062 WT:D positions itself as a high-density, high-rate mobile LPDDR4 DRAM device suitable for designs that require 32 Gbit of volatile memory operating at 1.6 GHz and 1.1 V. Its 512M × 64 organization and temperature rating of -30°C to 85°C make it a practical choice for systems that need wide data paths, substantial capacity, and operation within the specified thermal envelope.

This product is appropriate for engineers and procurement teams building mobile and high-bandwidth embedded systems who require a single-device memory solution from Micron Technology Inc. that meets the listed electrical and environmental specifications.

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