MT53B512M64D4NW-062 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.6GHZ FBGA |
|---|---|
| Quantity | 540 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4NW-062 WT ES:D – IC DRAM 32GBIT 1.6GHZ FBGA
The MT53B512M64D4NW-062 WT ES:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and specified for operation at a clock frequency of 1.6 GHz with a 1.1 V supply.
This device addresses designs that require high-density mobile LPDDR4 memory with defined operating range from −30°C to 85°C and is manufactured by Micron Technology Inc.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture suitable for systems using LPDDR4 memory.
- Density and Organization 32 Gbit capacity organized as 512M × 64 to provide high memory density in a single device.
- Clock Frequency Specified for operation at 1.6 GHz to support high-speed memory transactions.
- Power 1.1 V supply voltage for operation, consistent with low-voltage LPDDR4 designs.
- Temperature Range Rated for operation from −30°C to 85°C (TC), supporting a range of environmental conditions.
- Memory Format DRAM volatile memory suitable for primary system memory applications.
- Package FBGA package type as indicated in the product designation.
Typical Applications
- Mobile Devices Mobile LPDDR4 memory integration where high-density 32 Gbit storage and 1.6 GHz clocking are required.
- Embedded Systems Embedded platforms that need a compact, high-capacity DRAM device with low-voltage operation.
- Memory Subsystems High-density memory banks and modules leveraging the 512M × 64 organization for wide data paths.
Unique Advantages
- High Density (32 Gbit): Reduces the number of devices required to achieve target system memory capacity.
- LPDDR4 Architecture: Provides the defined mobile SDRAM feature set associated with LPDDR4 technology.
- 1.6 GHz Clock Rate: Enables support for high-speed memory operations in designs that require faster memory access.
- Low Voltage Operation: 1.1 V supply aligns with low-power design goals common in mobile and embedded applications.
- Extended Operating Temperature: Rated from −30°C to 85°C to accommodate varied thermal environments.
- 512M × 64 Organization: Offers a wide internal data path and simplifies system memory architecture planning.
Why Choose IC DRAM 32GBIT 1.6GHZ FBGA?
The MT53B512M64D4NW-062 WT ES:D positions itself as a high-density Mobile LPDDR4 DRAM option providing 32 Gbit capacity, 1.6 GHz operation, and 1.1 V supply characteristics. Its organization and electrical specifications make it appropriate for designers targeting compact, high-capacity memory implementations.
Manufactured by Micron Technology Inc., this device is suited for projects that require the specific combination of LPDDR4 technology, defined speed, and an extended operating temperature range. It offers a straightforward component choice for engineers specifying mobile LPDDR4 DRAM density and electrical parameters.
Request a quote or submit an inquiry for MT53B512M64D4NW-062 WT ES:D to obtain pricing and availability details.
