MT53B512M64D4NK-053 WT:C TR

The MT53B512M64D4NK-053 WT:C TR is a volatile DRAM device implementing Mobile LPDDR4 SDRAM technology. It provides 32 Gbit of memory density organized as 512M × 64 with a clock frequency of 1.866 GHz and a 1.1 V supply.

This device is packaged in a 366-ball WFBGA (15 mm × 15 mm) and is specified for an operating temperature range of −30°C to 85°C, making it suitable for systems that require high-density, low-voltage LPDDR4 memory in a compact package.

Key Features

• Memory Technology Mobile LPDDR4 SDRAM architecture providing volatile memory behavior for runtime data storage.
• Density & Organization 32 Gbit capacity arranged as 512M × 64 to deliver high memory density in a single die.
• Clock Performance Rated clock frequency of 1.866 GHz for timing requirements tied to LPDDR4 operation.
• Power 1.1 V supply voltage suited to low-voltage system architectures that require LPDDR4 operation.
• Package 366-ball WFBGA package (15 mm × 15 mm) optimized for compact board-level integration.
• Operating Temperature Specified for −30°C to 85°C (TC) to support a range of environmental conditions.

Typical Applications

• Mobile Devices — LPDDR4 memory for mobile-class systems where low-voltage, high-density DRAM is required.
• Handheld Computing — On-board memory for compact computing platforms that need 32 Gbit capacity in a small package footprint.
• Embedded Systems — System memory for embedded designs that require LPDDR4 technology and operation across −30°C to 85°C.

Unique Advantages

• High-density memory: 32 Gbit capacity in a single device reduces the number of components required for large memory footprints.
• LPDDR4 architecture: Mobile LPDDR4 SDRAM technology provides the specified 1.866 GHz clock operation for designs targeting that timing.
• Low-voltage operation: 1.1 V supply supports integration into low-voltage system domains.
• Compact WFBGA package: 366-ball 15 mm × 15 mm WFBGA package enables compact board layout and high-density placement.
• Wide operating range: Rated for −30°C to 85°C to accommodate varied thermal environments.
• Clear memory organization: 512M × 64 arrangement simplifies capacity planning and memory mapping.

Why Choose MT53B512M64D4NK-053 WT:C TR?

The MT53B512M64D4NK-053 WT:C TR combines 32 Gbit LPDDR4 memory density with 1.866 GHz clock capability and 1.1 V operation in a 366-WFBGA package, offering a compact, low-voltage memory option for designs that require these specific characteristics. Its specified −30°C to 85°C operating range supports deployment in a variety of system environments.

This device is well suited to designers and procurement teams seeking a high-density LPDDR4 component from Micron Technology Inc. where package footprint, voltage, and operating temperature are key selection criteria.

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